NCEP030N30GU - Даташиты. Аналоги. Основные параметры

http://www.ncepower.com NCEP030N30GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =30V,I =65ADS Duniquely optimized to provide the most efficient high frequencyR =2.65m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4m (typical) @ V =4.5V

Pb Free Producthttp://www.ncepower.com NCEP030N60AGUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP030N60AGU uses Super Trench II technology that V =60V,I =95ADS Dis uniquely optimized to provide the most efficient high R =2.2m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =3.0m (typical) @ V =4.5VDS(ON

NCEP030N12,NCEP030N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26

http://www.ncepower.com NCEP030N85GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP030N85GU uses Super Trench II technology that is V =85V,I =140ADS Duniquely optimized to provide the most efficient high frequencyR =2.65m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R pro

NCEP030N12,NCEP030N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26

NCEP030N12,NCEP030N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26

NCEP030N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =210ADS Dswitching performance. Both conduction and switching power R =2.65m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat