NCEP030N60AGU datasheet, подбор замены

 ..1. Size:931K  ncepower
 ncep030n60agu.pdf 

Pb Free Product http //www.ncepower.com NCEP030N60AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP030N60AGU uses Super Trench II technology that V =60V,I =95A DS D is uniquely optimized to provide the most efficient high R =2.2m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =3.0m (typical) @ V =4.5V DS(ON

 6.1. Size:500K  ncepower
 ncep030n12.pdf 

NCEP030N12,NCEP030N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26

 6.2. Size:758K  ncepower
 ncep030n85gu.pdf 

http //www.ncepower.com NCEP030N85GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP030N85GU uses Super Trench II technology that is V =85V,I =140A DS D uniquely optimized to provide the most efficient high frequency R =2.65m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R pro

 6.3. Size:500K  ncepower
 ncep030n12 ncep030n12d.pdf 

NCEP030N12,NCEP030N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26

 6.4. Size:500K  ncepower
 ncep030n12d.pdf 

NCEP030N12,NCEP030N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26

 6.5. Size:815K  ncepower
 ncep030n85ll.pdf 

NCEP030N85LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =210A DS D switching performance. Both conduction and switching power R =2.65m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinat

 6.6. Size:716K  ncepower
 ncep030n30gu.pdf 

http //www.ncepower.com NCEP030N30GU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =30V,I =65A DS D uniquely optimized to provide the most efficient high frequency R =2.65m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =4m (typical) @ V =4.5V