Справочник MOSFET. NCEP033N10D

 

NCEP033N10D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEP033N10D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 245 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 160 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 887.3 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для NCEP033N10D

 

 

NCEP033N10D Datasheet (PDF)

 ..1. Size:402K  ncepower
 ncep033n10d.pdf

NCEP033N10D NCEP033N10D

NCEP033N10, NCEP033N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO-2

 ..2. Size:402K  ncepower
 ncep033n10 ncep033n10d.pdf

NCEP033N10D NCEP033N10D

NCEP033N10, NCEP033N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO-2

 4.1. Size:402K  ncepower
 ncep033n10.pdf

NCEP033N10D NCEP033N10D

NCEP033N10, NCEP033N10DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO-2

 4.2. Size:402K  ncepower
 ncep033n10m.pdf

NCEP033N10D NCEP033N10D

NCEP033N10M, NCEP033N10MDNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO

 6.1. Size:1095K  ncepower
 ncep033n85d.pdf

NCEP033N10D NCEP033N10D

NCEP033N85, NCEP033N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =160ADS Dswitching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 6.2. Size:1095K  ncepower
 ncep033n85.pdf

NCEP033N10D NCEP033N10D

NCEP033N85, NCEP033N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =160ADS Dswitching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 6.3. Size:701K  ncepower
 ncep033n85m.pdf

NCEP033N10D NCEP033N10D

NCEP033N85M, NCEP033N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =160ADS Dswitching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e

 6.4. Size:332K  ncepower
 ncep033n85 ncep033n85d.pdf

NCEP033N10D NCEP033N10D

NCEP033N85, NCEP033N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =160A switching performance. Both conduction and switching power RDS(ON)=3.10m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

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