NCEP038N10GU datasheet, аналоги, основные параметры
Наименование производителя: NCEP038N10GU
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 170 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 135 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 560 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0038 Ohm
Тип корпуса: DFN5X6-8L
Аналог (замена) для NCEP038N10GU
- подборⓘ MOSFET транзистора по параметрам
NCEP038N10GU даташит
..1. Size:992K ncepower
ncep038n10gu.pdf 
http //www.ncepower.com NCEP038N10GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP038N10GU uses Super Trench II technology that is V =100V,I =135A DS D uniquely optimized to provide the most efficient high frequency R =3.45m (Typ.) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R produ
8.1. Size:1515K ncepower
ncep039n10m.pdf 
Pb Free Product NCEP039N10M, NCEP039N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =135A DS D uniquely optimized to provide the most efficient high frequency R =3.65m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m , t
8.2. Size:1810K ncepower
ncep039n10d.pdf 
NCEP039N10, NCEP039N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =135A DS D uniquely optimized to provide the most efficient high frequency R =3.65m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m , typical (TO-263)@ V
8.3. Size:679K ncepower
ncep036n10msl.pdf 
NCEP036N10MSL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =215A DS D switching performance. Both conduction and switching power R =3.0m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely low combinat
8.4. Size:1386K ncepower
ncep035n60ag.pdf 
Pb Free Product http //www.ncepower.com NCEP035N60AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N60AG uses Super Trench II technology that is V =60V,I =90A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m (typical) @
8.5. Size:397K ncepower
ncep035n10m.pdf 
NCEP035N10M, NCEP035N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.0m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.8m , typical (TO
8.6. Size:931K ncepower
ncep030n60agu.pdf 
Pb Free Product http //www.ncepower.com NCEP030N60AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP030N60AGU uses Super Trench II technology that V =60V,I =95A DS D is uniquely optimized to provide the most efficient high R =2.2m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =3.0m (typical) @ V =4.5V DS(ON
8.7. Size:314K ncepower
ncep039n10f.pdf 
NCEP039N10F NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =62A switching performance. Both conduction and switching power RDS(ON)=4.4m , typical @ VGS=10V losses are minimized due to an extremely low combinati
8.8. Size:1095K ncepower
ncep033n85d.pdf 
NCEP033N85, NCEP033N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =160A DS D switching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext
8.9. Size:500K ncepower
ncep030n12.pdf 
NCEP030N12,NCEP030N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26
8.10. Size:758K ncepower
ncep030n85gu.pdf 
http //www.ncepower.com NCEP030N85GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP030N85GU uses Super Trench II technology that is V =85V,I =140A DS D uniquely optimized to provide the most efficient high frequency R =2.65m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R pro
8.11. Size:414K ncepower
ncep035n85 ncep035n85d.pdf 
NCEP035N85,NCEP035N85D http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m
8.12. Size:402K ncepower
ncep033n10.pdf 
NCEP033N10, NCEP033N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO-2
8.13. Size:1515K ncepower
ncep039n10md.pdf 
Pb Free Product NCEP039N10M, NCEP039N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =135A DS D uniquely optimized to provide the most efficient high frequency R =3.65m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m , t
8.14. Size:729K ncepower
ncep035n60k.pdf 
http //www.ncepower.com NCEP035N60K NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N60K uses Super Trench II technology that is V =60V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R produc
8.15. Size:717K ncepower
ncep035n60ak.pdf 
http //www.ncepower.com NCEP035N60AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N60AK uses Super Trench II technology that is V =60V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m (typical) @ V =4.5V DS(ON)
8.16. Size:414K ncepower
ncep035n85d.pdf 
NCEP035N85,NCEP035N85D http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m
8.17. Size:500K ncepower
ncep030n12 ncep030n12d.pdf 
NCEP030N12,NCEP030N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26
8.18. Size:1095K ncepower
ncep033n85.pdf 
NCEP033N85, NCEP033N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =160A DS D switching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext
8.19. Size:997K ncepower
ncep031n85m.pdf 
Pb Free Product NCEP031N85M NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =180A DS D switching performance. Both conduction and switching power R =2.9m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to a
8.20. Size:414K ncepower
ncep035n85.pdf 
NCEP035N85,NCEP035N85D http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =150A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.3m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.1m
8.21. Size:500K ncepower
ncep030n12d.pdf 
NCEP030N12,NCEP030N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =215A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.4m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.2m , typical (TO-26
8.22. Size:338K ncepower
ncep039n10m ncep039n10md.pdf 
NCEP039N10M, NCEP039N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.65m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.5m , typical (
8.23. Size:346K ncepower
ncep035n12.pdf 
NCEP035N12,NCEP035N12D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
8.24. Size:777K ncepower
ncep035n72gu.pdf 
NCEP035N72GU NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =72V,I =120A DS D switching performance. Both conduction and switching power R =2.4m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinat
8.25. Size:309K ncepower
ncep035n12vd.pdf 
NCEP035N12VD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=2.5m , typical@ VGS=10V losses are minimized due to an extremely low combin
8.26. Size:346K ncepower
ncep035n12d.pdf 
NCEP035N12,NCEP035N12D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
8.27. Size:346K ncepower
ncep035n12 ncep035n12d.pdf 
NCEP035N12,NCEP035N12D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
8.28. Size:402K ncepower
ncep033n10m.pdf 
NCEP033N10M, NCEP033N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO
8.29. Size:402K ncepower
ncep033n10d.pdf 
NCEP033N10, NCEP033N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO-2
8.30. Size:701K ncepower
ncep033n85m.pdf 
NCEP033N85M, NCEP033N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =160A DS D switching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e
8.31. Size:402K ncepower
ncep033n10 ncep033n10d.pdf 
NCEP033N10, NCEP033N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =160A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.7m , typical (TO-2
8.32. Size:1810K ncepower
ncep039n10.pdf 
NCEP039N10, NCEP039N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =135A DS D uniquely optimized to provide the most efficient high frequency R =3.65m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m , typical (TO-263)@ V
8.33. Size:361K ncepower
ncep035n72.pdf 
NCEP035N72 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =72V,ID =140A switching performance. Both conduction and switching power RDS(ON)=3.3m , typical @ VGS=10V losses are minimized due to an extremely low combinat
8.34. Size:815K ncepower
ncep030n85ll.pdf 
NCEP030N85LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =210A DS D switching performance. Both conduction and switching power R =2.65m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinat
8.35. Size:716K ncepower
ncep030n30gu.pdf 
http //www.ncepower.com NCEP030N30GU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =30V,I =65A DS D uniquely optimized to provide the most efficient high frequency R =2.65m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =4m (typical) @ V =4.5V
8.36. Size:332K ncepower
ncep033n85 ncep033n85d.pdf 
NCEP033N85, NCEP033N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =160A switching performance. Both conduction and switching power RDS(ON)=3.10m , typical (TO-220)@ VGS=10V losses are minimized due to an ex
8.37. Size:338K ncepower
ncep039n10 ncep039n10d.pdf 
NCEP039N10, NCEP039N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.65m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.5m , typical (TO
8.38. Size:326K ncepower
ncep035n85gu.pdf 
http //www.ncepower.com NCEP035N85GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N85GU uses Super Trench II technology that is VDS =85V,ID =135A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.9m (typical) @ VGS=10V switching performance. Both conduction and switching power losses are minimized due to an extremel
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