Справочник MOSFET. NCEP040N85M

 

NCEP040N85M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEP040N85M
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 140 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 1000 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0039 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для NCEP040N85M

 

 

NCEP040N85M Datasheet (PDF)

 ..1. Size:1002K  ncepower
 ncep040n85m.pdf

NCEP040N85M NCEP040N85M

Pb Free ProductNCEP040N85M NCEP040N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimi

 ..2. Size:1002K  ncepower
 ncep040n85m ncep040n85md.pdf

NCEP040N85M NCEP040N85M

Pb Free ProductNCEP040N85M NCEP040N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimi

 0.1. Size:1002K  ncepower
 ncep040n85md.pdf

NCEP040N85M NCEP040N85M

Pb Free ProductNCEP040N85M NCEP040N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimi

 4.1. Size:699K  ncepower
 ncep040n85.pdf

NCEP040N85M NCEP040N85M

NCEP040N85, NCEP040N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.5m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an extr

 4.2. Size:1123K  ncepower
 ncep040n85g.pdf

NCEP040N85M NCEP040N85M

http://www.ncepower.com NCEP040N85GNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP040N85G uses Super Trench II technology that is V =85V,I =120ADS Duniquely optimized to provide the most efficient high frequencyR =3.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produc

 4.3. Size:683K  ncepower
 ncep040n85gu.pdf

NCEP040N85M NCEP040N85M

http://www.ncepower.com NCEP040N85GUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP040N85GU uses Super Trench II technology that is V =85V,I =125ADS Duniquely optimized to provide the most efficient high frequency R =3.2m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerlosses are minimized due to an extrem

 4.4. Size:325K  ncepower
 ncep040n85 ncep040n85d.pdf

NCEP040N85M NCEP040N85M

NCEP040N85, NCEP040N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =140A switching performance. Both conduction and switching power RDS(ON)=3.5m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 4.5. Size:699K  ncepower
 ncep040n85d.pdf

NCEP040N85M NCEP040N85M

NCEP040N85, NCEP040N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.5m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an extr

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