NCEP040N85M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCEP040N85M
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 200 W
Предельно допустимое напряжение сток-исток |Uds|: 85 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 140 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 75 nC
Время нарастания (tr): 10 ns
Выходная емкость (Cd): 1000 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0039 Ohm
Тип корпуса: TO-220
Аналог (замена) для NCEP040N85M
NCEP040N85M Datasheet (PDF)
ncep040n85m ncep040n85md.pdf
Pb Free ProductNCEP040N85M NCEP040N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =140ADS Dswitching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimi
ncep040n85g.pdf
http://www.ncepower.com NCEP040N85GNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP040N85G uses Super Trench II technology that is V =85V,I =120ADS Duniquely optimized to provide the most efficient high frequencyR =3.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R produc
ncep040n85gu.pdf
http://www.ncepower.com NCEP040N85GUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP040N85GU uses Super Trench II technology that is V =85V,I =125ADS Duniquely optimized to provide the most efficient high frequency R =3.2m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerlosses are minimized due to an extrem
ncep040n85 ncep040n85d.pdf
NCEP040N85, NCEP040N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =140A switching performance. Both conduction and switching power RDS(ON)=3.5m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
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