NCEP045N10F datasheet, аналоги, основные параметры

Наименование производителя: NCEP045N10F

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 40 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 13 ns

Cossⓘ - Выходная емкость: 590 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0052 Ohm

Тип корпуса: TO-220F

Аналог (замена) для NCEP045N10F

- подборⓘ MOSFET транзистора по параметрам

 

NCEP045N10F даташит

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 ncep045n10f.pdf pdf_icon

NCEP045N10F

NCEP045N10F NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =60A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical@ VGS=10V losses are minimized due to an extremely low combination o

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 ncep045n10ag.pdf pdf_icon

NCEP045N10F

NCEP045N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.0m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical @ VGS=4.5V losses are m

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 ncep045n10 ncep045n10d.pdf pdf_icon

NCEP045N10F

NCEP045N10,NCEP045N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=4.0m , typical (TO-263

 4.3. Size:371K  ncepower
 ncep045n10d.pdf pdf_icon

NCEP045N10F

NCEP045N10,NCEP045N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=4.0m , typical (TO-263

ПОКАЗАТЬ ЕЩЁ

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