NCEP045N85G datasheet, аналоги, основные параметры

Наименование производителя: NCEP045N85G

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 120 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 85 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 110 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 16 ns

Cossⓘ - Выходная емкость: 775 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm

Тип корпуса: PDFN5X6-8L

Аналог (замена) для NCEP045N85G

- подборⓘ MOSFET транзистора по параметрам

 

NCEP045N85G даташит

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NCEP045N85G

NCEP045N85G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =110A DS D switching performance. Both conduction and switching power R =3.7m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinatio

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NCEP045N85G

NCEP045N85GU NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =110A switching performance. Both conduction and switching power RDS(ON)=4.1m , typical @ VGS=10V losses are minimized due to an extremely low combin

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NCEP045N85G

NCEP045N85 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =150A DS D switching performance. Both conduction and switching power R =3.7m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinatio

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 ncep045n10ag.pdf pdf_icon

NCEP045N85G

NCEP045N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =125A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.0m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical @ VGS=4.5V losses are m

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCEP040N85M, NCEP040N85MD, NCEP040NH150LL, NCEP045N10AG, NCEP045N10F, NCEP045N10G, NCEP045N10M, NCEP045N85, P60NF06, NCEP045N85GU, NCEP048N72, NCEP048N85, NCEP048N85D, NCEP048N85M, NCEP048N85MD, NCEP048NH150, NCEP048NH150D