Справочник MOSFET. NCEP048N85MD

 

NCEP048N85MD Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP048N85MD
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 61 ns
   Cossⓘ - Выходная емкость: 740 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0048 Ohm
   Тип корпуса: TO-263
 

 Аналог (замена) для NCEP048N85MD

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP048N85MD Datasheet (PDF)

 ..1. Size:761K  ncepower
 ncep048n85md.pdf pdf_icon

NCEP048N85MD

NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e

 ..2. Size:761K  ncepower
 ncep048n85m ncep048n85md.pdf pdf_icon

NCEP048N85MD

NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e

 3.1. Size:761K  ncepower
 ncep048n85m.pdf pdf_icon

NCEP048N85MD

NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e

 4.1. Size:835K  ncepower
 ncep048n85 ncep048n85d.pdf pdf_icon

NCEP048N85MD

NCEP048N85M, NCEP048N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =120ADS Dswitching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e

ПОКАЗАТЬ ЕЩЁ

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History: 2N7016 | IRF7807TRPBF-1 | FDZ1416NZ | MSU4D5N50Q | MSU7N60T | WTD9575 | TK8P25DA

 

 
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