NCEP050N12 - Даташиты. Аналоги. Основные параметры
Наименование производителя: NCEP050N12
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 220 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 130 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 11.5 ns
Cossⓘ - Выходная емкость: 450 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
Тип корпуса: TO-220
Аналог (замена) для NCEP050N12
NCEP050N12 Datasheet (PDF)
ncep050n12.pdf

Pb Free ProductNCEP050N12, NCEP050N12DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =4.5m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.3m , typi
ncep050n12 ncep050n12d.pdf

Pb Free ProductNCEP050N12, NCEP050N12DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =4.5m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.3m , typi
ncep050n12d.pdf

Pb Free ProductNCEP050N12, NCEP050N12DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =130ADS Duniquely optimized to provide the most efficient high frequencyR =4.5m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.3m , typi
ncep050n12gu.pdf

NCEP050N12GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =120A switching performance. Both conduction and switching power RDS(ON)=4.6m , typical @ VGS=10V losses are minimized due to an extremely low combinatio
Другие MOSFET... NCEP048N85M , NCEP048N85MD , NCEP048NH150 , NCEP048NH150D , NCEP048NH150T , NCEP050N10M , NCEP050N10MD , NCEP050N10MG , HY1906P , NCEP050N12AGU , NCEP050N12D , NCEP050N12GU , NCEP050N85G , NCEP050N85M , NCEP053N85GU , NCEP055N10 , NCEP055N10D .
History: IRFH5303PBF | IRFH5300PBF | P8010BV | FRL430H
History: IRFH5303PBF | IRFH5300PBF | P8010BV | FRL430H



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