NCEP065N10GU datasheet, аналоги, основные параметры

Наименование производителя: NCEP065N10GU

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 110 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 90 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 11 ns

Cossⓘ - Выходная емкость: 335 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm

Тип корпуса: DFN5X6-8L

Аналог (замена) для NCEP065N10GU

- подборⓘ MOSFET транзистора по параметрам

 

NCEP065N10GU даташит

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NCEP065N10GU

http //www.ncepower.com NCEP065N10GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP065N10GU uses Super Trench II technology that is V =100V,I =90A DS D uniquely optimized to provide the most efficient high frequency R =5.9m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R prod

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 ncep065n10.pdf pdf_icon

NCEP065N10GU

NCEP065N10 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =93A switching performance. Both conduction and switching power RDS(ON)=6.0m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co

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 ncep065n10ak.pdf pdf_icon

NCEP065N10GU

NCEP065N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.0m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.7m , typical @ VGS=4.5V losses are m

 4.3. Size:331K  ncepower
 ncep065n10agu.pdf pdf_icon

NCEP065N10GU

http //www.ncepower.com NCEP065N10AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP065N10AGU uses Super Trench II technology that VDS =100V,ID =90A is uniquely optimized to provide the most efficient high RDS(ON)=5.3m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=6.5m (typical) @ VGS=4.5V switching power

ПОКАЗАТЬ ЕЩЁ

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