NCEP072N10A Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCEP072N10A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 88 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 322 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0096 Ohm
Тип корпуса: TO-220
Аналог (замена) для NCEP072N10A
NCEP072N10A Datasheet (PDF)
ncep072n10a.pdf

http://www.ncepower.com NCEP072N10ANCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP072N10A uses Super Trench II technology that is V =100V,I =88ADS Duniquely optimized to provide the most efficient high frequency R =6.2m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =8.4m (typical) @ V =4.5VDS(ON) GS
ncep072n10.pdf

http://www.ncepower.com NCEP072N10NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP072N10 uses Super Trench II technology that is VDS =100V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.8m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on) p
ncep075n85agu.pdf

NCEP075N85AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.6m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.6m , typical @ VGS=4.5V losses are minimiz
ncep075n85gu.pdf

NCEP075N85GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =75ADS Duniquely optimized to provide the most efficient high frequencyR =5.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combinati
Другие MOSFET... NCEP065N10GU , NCEP065N12AGU , NCEP065N85D , NCEP068N10K , NCEP070N10AGU , NCEP070N10GU , NCEP070N12 , NCEP070N12D , 2N7000 , NCEP075N85AGU , NCEP075N85GU , NCEP078N10AG , NCEP078N10AK , NCEP078N10G , NCEP080N10 , NCEP080N10A , NCEP080N10F .
History: STT3981 | FQB5P10TM | TK58A06N1 | HY3007M | XG65T230PS1B | NDFPD1N150CG | STP3401
History: STT3981 | FQB5P10TM | TK58A06N1 | HY3007M | XG65T230PS1B | NDFPD1N150CG | STP3401



Список транзисторов
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