NCEP080N12G - аналоги и даташиты транзистора

 

NCEP080N12G - Даташиты. Аналоги. Основные параметры


   Наименование производителя: NCEP080N12G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 110 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 85 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 16 ns
   Cossⓘ - Выходная емкость: 275 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
   Тип корпуса: DFN5X6-8L
 

 Аналог (замена) для NCEP080N12G

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP080N12G Datasheet (PDF)

 ..1. Size:355K  ncepower
 ncep080n12g.pdf pdf_icon

NCEP080N12G

NCEP080N12GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =85A switching performance. Both conduction and switching power RDS(ON)=7.8m , typical @ VGS=10V losses are minimized due to an extremely low combinati

 4.1. Size:290K  ncepower
 ncep080n12i.pdf pdf_icon

NCEP080N12G

NCEP080N12INCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =90A switching performance. Both conduction and switching power RDS(ON)=9.0m , typical @ VGS=10V losses are minimized due to an extremely low combinati

 4.2. Size:334K  ncepower
 ncep080n12 ncep080n12d.pdf pdf_icon

NCEP080N12G

NCEP080N12,NCEP080N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.5m , typical (TO-263

 4.3. Size:334K  ncepower
 ncep080n12d.pdf pdf_icon

NCEP080N12G

NCEP080N12,NCEP080N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.5m , typical (TO-263

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEP078N10AG , NCEP078N10AK , NCEP078N10G , NCEP080N10 , NCEP080N10A , NCEP080N10F , NCEP080N12 , NCEP080N12D , AON7410 , NCEP080N12I , NCEP080N85 , NCEP080N85AK , NCEP080N85K , NCEP082N10AS , NCEP085N10AS , NCEP088NH150GU , NCEP090N10AGU .

 

 
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