NCEP080N85K - Даташиты. Аналоги. Основные параметры
Наименование производителя: NCEP080N85K
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 90 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 393 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0086 Ohm
Тип корпуса: TO-252
Аналог (замена) для NCEP080N85K
NCEP080N85K Datasheet (PDF)
ncep080n85k.pdf

NCEP080N85KNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =75A switching performance. Both conduction and switching power RDS(ON)=8.2m , typical @ VGS=10V losses are minimized due to an extremely low combinatio
ncep080n85ak.pdf

NCEP080N85AKNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.1m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10.0m , typical @ VGS=4.5V losses are minimiz
ncep080n85.pdf

NCEP080N85NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =80A switching performance. Both conduction and switching power RDS(ON)=7.5m , typical @ VGS=10V losses are minimized due to an extremely low combination
ncep080n10f.pdf

NCEP080N10FNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =45A switching performance. Both conduction and switching power RDS(ON)=8.1m , typical (TO-220F)@ VGS=10V losses are minimized due to an extremely low
Другие MOSFET... NCEP080N10A , NCEP080N10F , NCEP080N12 , NCEP080N12D , NCEP080N12G , NCEP080N12I , NCEP080N85 , NCEP080N85AK , RFP50N06 , NCEP082N10AS , NCEP085N10AS , NCEP088NH150GU , NCEP090N10AGU , NCEP090N10GU , NCEP090N12AGU , NCEP090N20 , NCEP090N20D .
History: NCE4090K | UT108N03 | WMQ20N06TS
History: NCE4090K | UT108N03 | WMQ20N06TS



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