NCEP080N85K datasheet, аналоги, основные параметры

Наименование производителя: NCEP080N85K

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 90 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 85 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 9 ns

Cossⓘ - Выходная емкость: 393 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0086 Ohm

Тип корпуса: TO-252

Аналог (замена) для NCEP080N85K

- подборⓘ MOSFET транзистора по параметрам

 

NCEP080N85K даташит

 ..1. Size:299K  ncepower
 ncep080n85k.pdf pdf_icon

NCEP080N85K

NCEP080N85K NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =75A switching performance. Both conduction and switching power RDS(ON)=8.2m , typical @ VGS=10V losses are minimized due to an extremely low combinatio

 4.1. Size:299K  ncepower
 ncep080n85ak.pdf pdf_icon

NCEP080N85K

NCEP080N85AK NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.1m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10.0m , typical @ VGS=4.5V losses are minimiz

 4.2. Size:299K  ncepower
 ncep080n85.pdf pdf_icon

NCEP080N85K

NCEP080N85 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =80A switching performance. Both conduction and switching power RDS(ON)=7.5m , typical @ VGS=10V losses are minimized due to an extremely low combination

 6.1. Size:395K  ncepower
 ncep080n10f.pdf pdf_icon

NCEP080N85K

NCEP080N10F NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =45A switching performance. Both conduction and switching power RDS(ON)=8.1m , typical (TO-220F)@ VGS=10V losses are minimized due to an extremely low

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCEP080N10A, NCEP080N10F, NCEP080N12, NCEP080N12D, NCEP080N12G, NCEP080N12I, NCEP080N85, NCEP080N85AK, AON7410, NCEP082N10AS, NCEP085N10AS, NCEP088NH150GU, NCEP090N10AGU, NCEP090N10GU, NCEP090N12AGU, NCEP090N20, NCEP090N20D