NCEP082N10AS datasheet, подбор замены

 ..1. Size:448K  ncepower
 ncep082n10as.pdf 

NCEP082N10AS NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =20A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.4m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=9.0m , typical @ VGS=4.5V losses are m

 8.1. Size:299K  ncepower
 ncep080n85ak.pdf 

NCEP080N85AK NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.1m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10.0m , typical @ VGS=4.5V losses are minimiz

 8.2. Size:299K  ncepower
 ncep080n85k.pdf 

NCEP080N85K NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =75A switching performance. Both conduction and switching power RDS(ON)=8.2m , typical @ VGS=10V losses are minimized due to an extremely low combinatio

 8.3. Size:395K  ncepower
 ncep080n10f.pdf 

NCEP080N10F NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =45A switching performance. Both conduction and switching power RDS(ON)=8.1m , typical (TO-220F)@ VGS=10V losses are minimized due to an extremely low

 8.4. Size:355K  ncepower
 ncep080n12g.pdf 

NCEP080N12G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =85A switching performance. Both conduction and switching power RDS(ON)=7.8m , typical @ VGS=10V losses are minimized due to an extremely low combinati

 8.5. Size:290K  ncepower
 ncep080n12i.pdf 

NCEP080N12I NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =90A switching performance. Both conduction and switching power RDS(ON)=9.0m , typical @ VGS=10V losses are minimized due to an extremely low combinati

 8.6. Size:367K  ncepower
 ncep085n10as.pdf 

http //www.ncepower.com NCEP085N10AS NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP085N10AS uses Super Trench II technology that is VDS =100V,ID =17A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.0m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10.0m (typical) @ VGS=4.5V l

 8.7. Size:737K  ncepower
 ncep088nh150gu.pdf 

NCEP088NH150GU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP088NH150GU uses Super Trench III technology V =150V,I =96.5A DS D that is uniquely optimized to provide the most efficient high R =7.8m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM

 8.8. Size:334K  ncepower
 ncep080n12 ncep080n12d.pdf 

NCEP080N12,NCEP080N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.5m , typical (TO-263

 8.9. Size:334K  ncepower
 ncep080n12d.pdf 

NCEP080N12,NCEP080N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.5m , typical (TO-263

 8.10. Size:299K  ncepower
 ncep080n85.pdf 

NCEP080N85 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =80A switching performance. Both conduction and switching power RDS(ON)=7.5m , typical @ VGS=10V losses are minimized due to an extremely low combination

 8.11. Size:434K  ncepower
 ncep080n10.pdf 

NCEP080N10 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =75A switching performance. Both conduction and switching power RDS(ON)=7.4m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co

 8.12. Size:334K  ncepower
 ncep080n12.pdf 

NCEP080N12,NCEP080N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.5m , typical (TO-263

 8.13. Size:367K  ncepower
 ncep080n10a.pdf 

NCEP080N10A NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =78A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.8m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-220)@ VGS=4.5V