NCEP090N85AGU Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCEP090N85AGU
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 75 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 62 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 18 ns
Cossⓘ - Выходная емкость: 185 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
Тип корпуса: DFN5X6-8L
Аналог (замена) для NCEP090N85AGU
NCEP090N85AGU Datasheet (PDF)
ncep090n85agu.pdf

http://www.ncepower.com NCEP090N85AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85AGU uses Super Trench II technology that VDS =85V,ID =62A is uniquely optimized to provide the most efficient high RDS(ON)=7.7m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=10.4m (typical) @ VGS=4.5V switching power
ncep090n85a.pdf

http://www.ncepower.com NCEP090N85ANCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85A uses Super Trench II technology that is VDS =85V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=11.8m (typical) @ VGS=4.5V loss
ncep090n85aqu.pdf

http://www.ncepower.com NCEP090N85AQUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP090N85AQU uses Super Trench II technology that V =85V,I =56ADS Dis uniquely optimized to provide the most efficient high R =8.5m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =11.5m (typical) @ V =4.5VDS(ON) GSswitching
ncep090n85gu.pdf

http://www.ncepower.com NCEP090N85GUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85GU uses Super Trench II technology that is VDS =85V,ID =62A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.3m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on
Другие MOSFET... NCEP088NH150GU , NCEP090N10AGU , NCEP090N10GU , NCEP090N12AGU , NCEP090N20 , NCEP090N20D , NCEP090N20T , NCEP090N85A , IRF1407 , NCEP090N85AQU , NCEP090N85GU , NCEP090N85QU , NCEP092N10AS , NCEP095N10 , NCEP095N10A , NCEP095N10AG , NCEP10N12 .
History: WML26N65SR | SSF65R190S3 | FDB0260N1007L | WMR15N03TS | JFPC18N60C | SUP60N06-18 | KP809B
History: WML26N65SR | SSF65R190S3 | FDB0260N1007L | WMR15N03TS | JFPC18N60C | SUP60N06-18 | KP809B



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