NCEP095N10A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCEP095N10A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 100 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 65 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 45 nC
trⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 247.5 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0125 Ohm
Тип корпуса: TO-220
Аналог (замена) для NCEP095N10A
NCEP095N10A Datasheet (PDF)
ncep095n10a.pdf
NCEP095N10ANCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =65ADS Duniquely optimized to provide the most efficient high frequencyR =9m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =11m , typical@ V =4.5VDS(ON) GSlosses are minimi
ncep095n10ag.pdf
NCEP095N10AGNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =60A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10.5m , typical@ VGS=4.5V losses are mi
ncep095n10.pdf
NCEP095N10NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =65A switching performance. Both conduction and switching power RDS(ON)=8.5m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co
ncep090n20t.pdf
NCEP090N20TNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =200V,I =125ADS Dswitching performance. Both conduction and switching power R =7.5m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati
ncep090n85gu.pdf
http://www.ncepower.com NCEP090N85GUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85GU uses Super Trench II technology that is VDS =85V,ID =62A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.3m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on
ncep090n20 ncep090n20d.pdf
NCEP090N20,NCEP090N20DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =200V,I =125ADS Duniquely optimized to provide the most efficient high frequencyR =7.7m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =7.5m , typical (TO-263)@ V =1
ncep090n85qu.pdf
Pb Free Producthttp://www.ncepower.com NCEP090N85QUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP090N85QU uses Super Trench II technology that is V =85V,I =56ADS Duniquely optimized to provide the most efficient high frequencyR =8.2m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate
ncep090n85a.pdf
http://www.ncepower.com NCEP090N85ANCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85A uses Super Trench II technology that is VDS =85V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=11.8m (typical) @ VGS=4.5V loss
ncep090n85aqu.pdf
http://www.ncepower.com NCEP090N85AQUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP090N85AQU uses Super Trench II technology that V =85V,I =56ADS Dis uniquely optimized to provide the most efficient high R =8.5m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =11.5m (typical) @ V =4.5VDS(ON) GSswitching
ncep092n10as.pdf
NCEP092N10ASNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =14A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.4m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10.0m , typical@ VGS=4.5V losses are minimize
ncep090n85agu.pdf
http://www.ncepower.com NCEP090N85AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP090N85AGU uses Super Trench II technology that VDS =85V,ID =62A is uniquely optimized to provide the most efficient high RDS(ON)=7.7m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=10.4m (typical) @ VGS=4.5V switching power
ncep090n10gu.pdf
NCEP090N10GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =65A switching performance. Both conduction and switching power RDS(ON)=7.0m , typical@ VGS=10V losses are minimized due to an extremely low combinati
ncep090n20d.pdf
NCEP090N20,NCEP090N20DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =200V,I =125ADS Duniquely optimized to provide the most efficient high frequencyR =7.7m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =7.5m , typical (TO-263)@ V =1
ncep090n12agu.pdf
NCEP090N12AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.7m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=9.5m , typical @ VGS=4.5V losses are
ncep090n10agu.pdf
NCEP090N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =65A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.0m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=10m , typical@ VGS=4.5V losses are min
ncep090n20.pdf
NCEP090N20,NCEP090N20DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =200V,I =125ADS Duniquely optimized to provide the most efficient high frequencyR =7.7m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =7.5m , typical (TO-263)@ V =1
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD