NCEP1260F - описание и поиск аналогов

Pb Free Product http //www.ncepower.com NCEP1260F NCE N-Channel Super Trench Power MOSFET Description The NCEP1260F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

http //www.ncepower.com NCEP12T11 NCE N-Channel Super Trench Power MOSFET Description The NCEP12T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

Pb Free Product http //www.ncepower.com NCEP1278 NCE N-Channel Super Trench Power MOSFET Description The NCEP1278 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

Pb Free Product http //www.ncepower.com NCEP1214AS NCE N-Channel Super Trench Power MOSFET Description The NCEP1214AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

http //www.ncepower.com NCEP1290AK NCE N-Channel Super Trench Power MOSFET Description The NCEP1290AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

http //www.ncepower.com NCEP1216AS NCE N-Channel Super Trench Power MOSFET Description The NCEP1216AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

NCEP12N10AQ http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP12N10AQ uses Super Trench II technology that is VDS =100V,ID =46A uniquely optimized to provide the most efficient high frequency RDS(ON)=12.1m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=15.8m (typical) @ VGS=4.5V

Pb Free Product http //www.ncepower.com NCEP12T12D NCE N-Channel Super Trench Power MOSFET Description The NCEP12T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

http //www.ncepower.com NCEP12T15 NCE N-Channel Super Trench Power MOSFET Description The NCEP12T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

Pb Free Product http //www.ncepower.com NCEP12T12 NCE N-Channel Super Trench Power MOSFET Description The NCEP12T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

NCEP12N12K NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =60A switching performance. Both conduction and switching power RDS(ON)=12m , typical@ VGS=10V losses are minimized due to an extremely low combination

Pb Free Product http //www.ncepower.com NCEP1212AS NCE N-Channel Super Trench Power MOSFET Description The NCEP1212AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

Pb Free Product http //www.ncepower.com NCEP12T18 NCE N-Channel Super Trench Power MOSFET Description The NCEP12T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

Pb Free Product http //www.ncepower.com NCEP1250AK NCE N-Channel Super Trench Power MOSFET Description The NCEP1250AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

Pb Free Product http //www.ncepower.com NCEP12T10F NCE N-Channel Super Trench Power MOSFET Description The NCEP12T10F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

NCEP12N12AK NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =60A uniquely optimized to provide the most efficient high frequency RDS(ON)=11m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=14m , typical @ VGS=4.5V losses are mini

NCEP12N12AS NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =11A uniquely optimized to provide the most efficient high frequency RDS(ON)=13.3m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=16.2m , typical@ VGS=4.5V losses are mi

NCEP12N12 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =63A switching performance. Both conduction and switching power RDS(ON)=11.5m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co

http //www.ncepower.com NCEP12T13A NCE N-Channel Super Trench Power MOSFET Description The NCEP12T13A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit