NCEP12N12K Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCEP12N12K
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 90 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 170 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
Тип корпуса: TO-252
Аналог (замена) для NCEP12N12K
NCEP12N12K Datasheet (PDF)
ncep12n12k.pdf

NCEP12N12KNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =60A switching performance. Both conduction and switching power RDS(ON)=12m , typical@ VGS=10V losses are minimized due to an extremely low combination
ncep12n12ak.pdf

NCEP12N12AKNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =60A uniquely optimized to provide the most efficient high frequency RDS(ON)=11m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=14m , typical @ VGS=4.5V losses are mini
ncep12n12as.pdf

NCEP12N12ASNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =11A uniquely optimized to provide the most efficient high frequency RDS(ON)=13.3m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=16.2m , typical@ VGS=4.5V losses are mi
ncep12n12.pdf

NCEP12N12NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =63A switching performance. Both conduction and switching power RDS(ON)=11.5m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co
Другие MOSFET... NCEP1250AK , NCEP1260F , NCEP1278 , NCEP1290AK , NCEP12N10AQ , NCEP12N12 , NCEP12N12AK , NCEP12N12AS , 60N06 , NCEP12T10F , NCEP12T11 , NCEP12T13A , NCEP12T15 , NCEP12T18 , NCEP13N10AS , NCEP1505S , NCEP1520AK .
History: KHB019N20F1 | STB20NM50T4 | HRP90N75K | NCE30P28Q | SWD2N60DC | WNM07N60 | WML26N60C4
History: KHB019N20F1 | STB20NM50T4 | HRP90N75K | NCE30P28Q | SWD2N60DC | WNM07N60 | WML26N60C4



Список транзисторов
Обновления
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