NCEP1520AK datasheet, аналоги, основные параметры

Наименование производителя: NCEP1520AK

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 68 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6 ns

Cossⓘ - Выходная емкость: 74.4 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.082 Ohm

Тип корпуса: TO-252

Аналог (замена) для NCEP1520AK

- подборⓘ MOSFET транзистора по параметрам

 

NCEP1520AK даташит

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NCEP1520AK

http //www.ncepower.com NCEP1520AK NCE N-Channel Super Trench Power MOSFET Description The NCEP1520AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

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NCEP1520AK

Pb Free Product http //www.ncepower.com NCEP1520K NCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

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NCEP1520AK

http //www.ncepower.com NCEP1520G NCE N-Channel Super Trench Power MOSFET Description The NCEP1520G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =150V,ID =20A frequency switching performance. Both conduction and RDS(ON)=59m (typical) @ VGS=10V switching power losses are minimized due to an extremely low com

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ncep1520bk.pdfpdf_icon

NCEP1520AK

http //www.ncepower.com NCEP1520BK NCE N-Channel Super Trench Power MOSFET Description The NCEP1520BK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

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