NCEP1580D datasheet, аналоги, основные параметры
Наименование производителя: NCEP1580D
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 210 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 382 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0125 Ohm
Тип корпуса: TO-263
Аналог (замена) для NCEP1580D
- подборⓘ MOSFET транзистора по параметрам
NCEP1580D даташит
ncep1580d.pdf
http //www.ncepower.com NCEP1580D NCE N-Channel Super Trench Power MOSFET Description The NCEP1580D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep1580gu.pdf
http //www.ncepower.com NCEP1580GU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1580GU uses Super Trench technology that is V =150V,I =80A DS D uniquely optimized to provide the most efficient high R =12.0m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) DS(on) switching
ncep1580f.pdf
http //www.ncepower.com NCEP1580F NCE N-Channel Super Trench Power MOSFET Description The NCEP1580F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switching
ncep1580.pdf
http //www.ncepower.com NCEP1580 NCE N-Channel Super Trench Power MOSFET Description The NCEP1580 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin
Другие IGBT... NCEP1520AK, NCEP1520BK, NCEP1520G, NCEP1545A, NCEP1545AG, NCEP1545AK, NCEP1570GU, NCEP1575GU, IRF740, NCEP1580GU, NCEP15P30A, NCEP15P30AK, NCEP15T10V, NCEP15T14LL, NCEP15T14T, NCEP15T18T, NCEP15T26LL
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: ASDM40N60KQ | ASDM40N40E | ASDM40N100P | ASDM40DN20E | ASDM3416EZA | ASDM3415ZA | ASDM3401ZA | ASDM3401 | ASDM3400ZA | ASDM30P30BE | RM50P30DF | CRTT095N12N | CRSS028N10N | CRST030N10N | CRJQ80N65F | ASDM20N20KQ
Popular searches
50n06 | mje350 | 2n3866 | irf 3205 | 2n5088 equivalent | d882 transistor | 2n3771 | s9018




