NCEP15P30AK MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCEP15P30AK
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 235 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 29.5 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 25 nC
trⓘ - Время нарастания: 18 ns
Cossⓘ - Выходная емкость: 135 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.125 Ohm
Тип корпуса: TO252
Аналог (замена) для NCEP15P30AK
NCEP15P30AK Datasheet (PDF)
ncep15p30ak.pdf
http://www.ncepower.comNCEP15P30AKNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP15P30AK uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-150V,I =-29.5ADS Dswitching performance. Both conduction and switching power R =90m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremel
ncep15p30a.pdf
http://www.ncepower.comNCEP15P30ANCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP15P30A uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-150V,I =-30ADS Dswitching performance. Both conduction and switching power R =83m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremely lo
ncep1520k.pdf
Pb Free Producthttp://www.ncepower.com NCEP1520KNCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep1580gu.pdf
http://www.ncepower.com NCEP1580GUNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP1580GU uses Super Trench technology that isV =150V,I =80ADS Duniquely optimized to provide the most efficient highR =12.0m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andExcellent gate charge x R product(FOM)DS(on)switching
ncep1505s.pdf
http://www.ncepower.com NCEP1505SNCE N-Channel Super Trench Power MOSFET Description The NCEP1505S uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep1580d.pdf
http://www.ncepower.com NCEP1580DNCE N-Channel Super Trench Power MOSFET Description The NCEP1580D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep1520g.pdf
http://www.ncepower.com NCEP1520GNCE N-Channel Super Trench Power MOSFET Description The NCEP1520G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =150V,ID =20A frequency switching performance. Both conduction and RDS(ON)=59m (typical) @ VGS=10V switching power losses are minimized due to an extremely low com
ncep1545ag.pdf
http://www.ncepower.com NCEP1545AGNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545AG uses Super Trench technology that is VDS =150V,ID =45A uniquely optimized to provide the most efficient high RDS(ON)=26m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=30m (typical) @ VGS=4.5V switching power losses are mi
ncep1580f.pdf
http://www.ncepower.com NCEP1580FNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP1580F uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switching
ncep1580.pdf
http://www.ncepower.com NCEP1580NCE N-Channel Super Trench Power MOSFET Description The NCEP1580 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin
ncep15t14ll.pdf
http://www.ncepower.com NCEP15T14LLNCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =150V,ID =170A switching performance. Both conduction and switching power RDS(ON)=5.0m , typical@ VGS=10V losses are minimized due to an extre
ncep1520bk.pdf
http://www.ncepower.com NCEP1520BKNCE N-Channel Super Trench Power MOSFET Description The NCEP1520BK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep15t14d.pdf
Pb Free Producthttp://www.ncepower.com NCEP15T14DNCE N-Channel Super Trench Power MOSFET Description The NCEP15T14D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high
ncep1545k.pdf
Pb Free Producthttp://www.ncepower.com NCEP1545KNCE N-Channel Super Trench Power MOSFET Description The NCEP1545K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep1570 ncep1570d.pdf
http://www.ncepower.com NCEP1570,NCEP1570DNCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(
ncep15t10v.pdf
http://www.ncepower.com NCEP15T10VNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP15T10V uses Super Trench technology that isV =150V,I =100ADS Duniquely optimized to provide the most efficient highR =5.7m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andExcellent gate charge x R product(FOM)DS(on)switching
ncep1570d.pdf
http://www.ncepower.com NCEP1570,NCEP1570DNCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(
ncep15t14.pdf
Pb Free Producthttp://www.ncepower.com NCEP15T14NCE N-Channel Super Trench Power MOSFET Description The NCEP15T14 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-f
ncep1575gu.pdf
http://www.ncepower.com NCEP1575GUNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP1575GU uses Super Trench technology that isV =150V,I =75ADS Duniquely optimized to provide the most efficient highR =13m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andExcellent gate charge x R product(FOM)DS(on)switching p
ncep1520.pdf
http://www.ncepower.com NCEP1520NCE N-Channel Super Trench Power MOSFET Description The NCEP1520 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin
ncep1545g.pdf
http://www.ncepower.com NCEP1545GNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545G uses Super Trench technology that is VDS =150V,ID =45A uniquely optimized to provide the most efficient high RDS(ON)=24m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(FOM) switching pow
ncep1570.pdf
http://www.ncepower.com NCEP1570,NCEP1570DNCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is VDS =150V,ID =70A uniquely optimized to provide the most efficient high RDS(ON)=13.5m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(
ncep1520ak.pdf
http://www.ncepower.com NCEP1520AKNCE N-Channel Super Trench Power MOSFET Description The NCEP1520AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep1570gu.pdf
http://www.ncepower.com NCEP1570GUNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP1570GU uses Super Trench technology that isV =150V,I =70ADS Duniquely optimized to provide the most efficient highR =13.5m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andExcellent gate charge x R product(FOM)DS(on)switching
ncep1545a.pdf
http://www.ncepower.com NCEP1545ANCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEP1545AK uses Super Trench technology that isV =150V,I =45ADS Duniquely optimized to provide the most efficient high R =22m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =28m (typical) @ V =4.5VDS(ON) GSswitching power losses ar
ncep15t18t.pdf
http://www.ncepower.com NCEP15T18TNCE N-Channel Super Trench Power MOSFETDescriptionThe series of devices uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =150V,I =180ADS Dswitching performance. Both conduction and switching power R =4.45m , typical@ V =10VDS(ON) GSlosses are minimized due to an extrem
ncep1545ak.pdf
http://www.ncepower.com NCEP1545AKNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEP1545AK uses Super Trench technology that isV =150V,I =45ADS Duniquely optimized to provide the most efficient high R =26m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =30m (typical) @ V =4.5VDS(ON) GSswitching power losses a
ncep15t14t.pdf
http://www.ncepower.com NCEP15T14TNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP15T14T uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequencyDS(ON) gswitchi
ncep15t26ll.pdf
http://www.ncepower.com NCEP15T26LLNCE N-Channel Super Trench Power MOSFETDescriptionThe series of devices uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =150V,I =255ADS Dswitching performance. Both conduction and switching power R =4.2m , typical@ V =10VDS(ON) GSlosses are minimized due to an extrem
ncep1520k.pdf
Pb Free Producthttp://www.ncepower.com NCEP1520KNCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918