NCEP15T10V datasheet, аналоги, основные параметры
Наименование производителя: NCEP15T10V
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 200 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 36 ns
Cossⓘ - Выходная емкость: 690 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0062 Ohm
Тип корпуса: DFN8X8
Аналог (замена) для NCEP15T10V
- подборⓘ MOSFET транзистора по параметрам
NCEP15T10V даташит
ncep15t10v.pdf
http //www.ncepower.com NCEP15T10V NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP15T10V uses Super Trench technology that is V =150V,I =100A DS D uniquely optimized to provide the most efficient high R =5.7m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) DS(on) switching
ncep15t14ll.pdf
http //www.ncepower.com NCEP15T14LL NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =150V,ID =170A switching performance. Both conduction and switching power RDS(ON)=5.0m , typical@ VGS=10V losses are minimized due to an extre
ncep15t14d.pdf
Pb Free Product http //www.ncepower.com NCEP15T14D NCE N-Channel Super Trench Power MOSFET Description The NCEP15T14D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high
ncep15t14.pdf
Pb Free Product http //www.ncepower.com NCEP15T14 NCE N-Channel Super Trench Power MOSFET Description The NCEP15T14 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-f
Другие IGBT... NCEP1545AG, NCEP1545AK, NCEP1570GU, NCEP1575GU, NCEP1580D, NCEP1580GU, NCEP15P30A, NCEP15P30AK, IRF540, NCEP15T14LL, NCEP15T14T, NCEP15T18T, NCEP15T26LL, NCEP16N85AK, NCEP18N10AG, NCEP18N10AK, NCEP18N10AQ
History: RJK1008DPE | GSM2604
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Список транзисторов
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