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NCEP15T10V MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEP15T10V
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 80 nC
   trⓘ - Время нарастания: 36 ns
   Cossⓘ - Выходная емкость: 690 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0062 Ohm
   Тип корпуса: DFN8X8

 Аналог (замена) для NCEP15T10V

 

 

NCEP15T10V Datasheet (PDF)

 ..1. Size:680K  ncepower
 ncep15t10v.pdf

NCEP15T10V NCEP15T10V

http://www.ncepower.com NCEP15T10VNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP15T10V uses Super Trench technology that isV =150V,I =100ADS Duniquely optimized to provide the most efficient highR =5.7m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andExcellent gate charge x R product(FOM)DS(on)switching

 6.1. Size:372K  ncepower
 ncep15t14ll.pdf

NCEP15T10V NCEP15T10V

http://www.ncepower.com NCEP15T14LLNCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =150V,ID =170A switching performance. Both conduction and switching power RDS(ON)=5.0m , typical@ VGS=10V losses are minimized due to an extre

 6.2. Size:386K  ncepower
 ncep15t14d.pdf

NCEP15T10V NCEP15T10V

Pb Free Producthttp://www.ncepower.com NCEP15T14DNCE N-Channel Super Trench Power MOSFET Description The NCEP15T14D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

 6.3. Size:354K  ncepower
 ncep15t14.pdf

NCEP15T10V NCEP15T10V

Pb Free Producthttp://www.ncepower.com NCEP15T14NCE N-Channel Super Trench Power MOSFET Description The NCEP15T14 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-f

 6.4. Size:802K  ncepower
 ncep15t18t.pdf

NCEP15T10V NCEP15T10V

http://www.ncepower.com NCEP15T18TNCE N-Channel Super Trench Power MOSFETDescriptionThe series of devices uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =150V,I =180ADS Dswitching performance. Both conduction and switching power R =4.45m , typical@ V =10VDS(ON) GSlosses are minimized due to an extrem

 6.5. Size:2049K  ncepower
 ncep15t14t.pdf

NCEP15T10V NCEP15T10V

http://www.ncepower.com NCEP15T14TNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP15T14T uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequencyDS(ON) gswitchi

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