NCEP18N10AQ Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCEP18N10AQ
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 48 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 16 ns
Cossⓘ - Выходная емкость: 147.4 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm
Тип корпуса: DFN3.3X3.3-8L
Аналог (замена) для NCEP18N10AQ
NCEP18N10AQ Datasheet (PDF)
ncep18n10aq.pdf

http://www.ncepower.com NCEP18N10AQNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AQ uses Super Trench II technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high frequency RDS(ON)=16.0m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=18.0m (typical) @ VGS=4.5V lo
ncep18n10ar.pdf

http://www.ncepower.com NCEP18N10ARNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP18N10AR uses Super Trench II technology that is VDS =100V,ID =9.5A uniquely optimized to provide the most efficient high frequency RDS(ON)=19.2m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=23.0m (typical) @ VGS=4.5V l
ncep18n10ak.pdf

http://www.ncepower.com NCEP18N10AKNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP18N10AK uses Super Trench II technology that is V =100V,I =42ADS Duniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5VDS(ON)
ncep18n10ag.pdf

http://www.ncepower.com NCEP18N10AGNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP18N10AG uses Super Trench II technology that is V =100V,I =40ADS Duniquely optimized to provide the most efficient high frequency R =15.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =19.5m (typical) @ V =4.5VDS(ON)
Другие MOSFET... NCEP15T10V , NCEP15T14LL , NCEP15T14T , NCEP15T18T , NCEP15T26LL , NCEP16N85AK , NCEP18N10AG , NCEP18N10AK , IRF630 , NCEP18N10AR , NCEP2390 , NCEP2390D , NCEP25N10AD , NCEP25N10AG , NCEP25N10AQ , NCEP25ND10AG , NCEP3045BGU .
History: AO3413L | STD10NM65N | WML11N65SR | AO4912 | SI4992EY | IPP100N10S3-05 | SMG2310A
History: AO3413L | STD10NM65N | WML11N65SR | AO4912 | SI4992EY | IPP100N10S3-05 | SMG2310A



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