NCEP25N10AD Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCEP25N10AD
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 70 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 123.9 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
Тип корпуса: TO-263
NCEP25N10AD Datasheet (PDF)
ncep25n10ad.pdf

http://www.ncepower.com NCEP25N10ADNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP25N10AD uses Super Trench II technology that is V =100V,I =35ADS Duniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =26m (typical) @ V =4.5VDS(ON) GS
ncep25n10aq.pdf

http://www.ncepower.com NCEP25N10AQNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AQ uses Super Trench II technology that is VDS =100V,ID =27A uniquely optimized to provide the most efficient high frequency RDS(ON)=19m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=25m (typical) @ VGS=4.5V losses
ncep25n10ag.pdf

http://www.ncepower.com NCEP25N10AGNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AG uses Super Trench II technology that is VDS =100V,ID =30A uniquely optimized to provide the most efficient high frequency RDS(ON)=21m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=26m (typical) @ VGS=4.5V losses
ncep25n10ak.pdf

http://www.ncepower.com NCEP25N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AK uses Super Trench II technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high frequency RDS(ON)=21m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=26m (typical) @ VGS=4.5V losses
Другие MOSFET... NCEP15T26LL , NCEP16N85AK , NCEP18N10AG , NCEP18N10AK , NCEP18N10AQ , NCEP18N10AR , NCEP2390 , NCEP2390D , P55NF06 , NCEP25N10AG , NCEP25N10AQ , NCEP25ND10AG , NCEP3045BGU , NCEP3045GU , NCEP3060EQ , NCEP3065BQU , NCEP3065QU .
History: FCP20N60 | STP5NK52ZD | STN4536
History: FCP20N60 | STP5NK52ZD | STN4536



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