NCEP25N10AD datasheet, аналоги, основные параметры

Наименование производителя: NCEP25N10AD

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 70 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 15 ns

Cossⓘ - Выходная емкость: 123.9 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm

Тип корпуса: TO-263

Аналог (замена) для NCEP25N10AD

- подборⓘ MOSFET транзистора по параметрам

 

NCEP25N10AD даташит

 ..1. Size:751K  ncepower
 ncep25n10ad.pdf pdf_icon

NCEP25N10AD

http //www.ncepower.com NCEP25N10AD NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AD uses Super Trench II technology that is V =100V,I =35A DS D uniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =26m (typical) @ V =4.5V DS(ON) GS

 4.1. Size:304K  ncepower
 ncep25n10aq.pdf pdf_icon

NCEP25N10AD

http //www.ncepower.com NCEP25N10AQ NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AQ uses Super Trench II technology that is VDS =100V,ID =27A uniquely optimized to provide the most efficient high frequency RDS(ON)=19m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=25m (typical) @ VGS=4.5V losses

 4.2. Size:321K  ncepower
 ncep25n10ag.pdf pdf_icon

NCEP25N10AD

http //www.ncepower.com NCEP25N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AG uses Super Trench II technology that is VDS =100V,ID =30A uniquely optimized to provide the most efficient high frequency RDS(ON)=21m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=26m (typical) @ VGS=4.5V losses

 4.3. Size:367K  ncepower
 ncep25n10ak.pdf pdf_icon

NCEP25N10AD

http //www.ncepower.com NCEP25N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP25N10AK uses Super Trench II technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high frequency RDS(ON)=21m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=26m (typical) @ VGS=4.5V losses

ПОКАЗАТЬ ЕЩЁ

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