FQB9N50C - описание и поиск аналогов

TM QFET FQB9N50C/FQI9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

October 2006 TM FRFET FQB9N50CF 500V N-Channel MOSFET Features Description 9A, 500V, RDS(on) = 0.85 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 28nC) DMOS technology. Low Crss ( typical 24pF) This advanced technology has been especially tailored to

April 2000 TM QFET QFET QFET QFET FQB9N50 / FQI9N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.0A, 500V, RDS(on) = 0.73 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology

QFET FQB9N25C/FQI9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 26.5 nC) planar stripe, DMOS technology. Low Crss ( typical 45.5 pF) This advanced technology has been especially tailore

May 2000 TM QFET QFET QFET QFET FQB9N25 / FQI9N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.4A, 250V, RDS(on) = 0.42 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15.5 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technology

May 2000 TM QFET QFET QFET QFET FQB9N15 / FQI9N15 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.0A, 150V, RDS(on) = 0.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has

June 2000 TM QFET QFET QFET QFET FQB9N08L / FQI9N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.3A, 80V, RDS(on) = 0.21 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.7 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced techno

December 2000 TM QFET QFET QFET QFET FQB9N08 / FQI9N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.3A, 80V, RDS(on) = 0.21 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.9 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology