NCEP30T15GU datasheet, аналоги, основные параметры

Наименование производителя: NCEP30T15GU

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 85 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 150 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 5 ns

Cossⓘ - Выходная емкость: 902 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0025 Ohm

Тип корпуса: DFN5X6-8L

Аналог (замена) для NCEP30T15GU

- подборⓘ MOSFET транзистора по параметрам

 

NCEP30T15GU даташит

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NCEP30T15GU

http //www.ncepower.com NCEP30T15GU NCE N-Channel Super Trench Power MOSFET Description The NCEP30T15GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 6.1. Size:1031K  ncepower
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NCEP30T15GU

Pb Free Product http //www.ncepower.com NCEP30T17GU NCE N-Channel Super Trench Power MOSFET Description The NCEP30T17GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g hig

 6.2. Size:366K  ncepower
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NCEP30T15GU

Pb Free Product http //www.ncepower.com NCEP30T17G NCE N-Channel Super Trench Power MOSFET Description The NCEP30T17G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

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NCEP30T15GU

Pb Free Product http //www.ncepower.com NCEP30T19G NCE N-Channel Super Trench Power MOSFET Description The NCEP30T19G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

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