NCEP40PT13D datasheet, аналоги, основные параметры
Наименование производителя: NCEP40PT13D
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 220 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 130 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 30 ns
Cossⓘ - Выходная емкость: 1500 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
Тип корпуса: TO-263
Аналог (замена) для NCEP40PT13D
- подборⓘ MOSFET транзистора по параметрам
NCEP40PT13D даташит
ncep40pt13d.pdf
http //www.ncepower.com NCEP40PT13D NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT13D uses Super Trench technology that is V =-40V,I =-130A DS D uniquely optimized to provide the most efficient high frequency R =3.85m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =5.0m (typical) @ V =-4.5V DS(ON)
ncep40pt13gu.pdf
http //www.ncepower.com NCEP40PT13GU NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT13GU uses Super Trench technology that is V =-40V,I =-130A DS D uniquely optimized to provide the most efficient high frequency R =3.2m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =4.8m (typical) @ V =-4.5V DS(ON
ncep40pt15d.pdf
http //www.ncepower.com NCEP40PT15D NCE P-Channel Super Trench Power MOSFET Description The NCEP40PT15D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep40pt15g.pdf
http //www.ncepower.com NCEP40PT15G NCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40PT15G uses Super Trench technology that is V =-40V,I =-150A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =3.8m (typical) @ V =-4.5V DS(ON) GS
Другие IGBT... NCEP40P35GU, NCEP40P60G, NCEP40P60K, NCEP40P60Q, NCEP40P65GU, NCEP40P65QU, NCEP40P80G, NCEP40PT12K, IRFP450, NCEP40PT13GU, NCEP40PT15G, NCEP40PT30VD, NCEP40T11, NCEP40T11AG, NCEP40T11AK, NCEP40T11K, NCEP40T12AGU
History: RJL5015DPK | KI001P
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