Аналоги NCEP40T11K. Основные параметры
Наименование производителя: NCEP40T11K
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 110 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 1050 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0048 Ohm
Тип корпуса: TO-252
Аналог (замена) для NCEP40T11K
NCEP40T11K даташит
ncep40t11k.pdf
http //www.ncepower.com NCEP40T11K NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switch
ncep40t11.pdf
http //www.ncepower.com NCEP40T11 NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swi
ncep40t11ak.pdf
Pb Free Product http //www.ncepower.com NCEP40T11AK NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g hig
ncep40t11ag.pdf
Pb Free Product http //www.ncepower.com NCEP40T11AG NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Другие MOSFET... NCEP40PT12K , NCEP40PT13D , NCEP40PT13GU , NCEP40PT15G , NCEP40PT30VD , NCEP40T11 , NCEP40T11AG , NCEP40T11AK , 2SK3568 , NCEP40T12AGU , NCEP40T12GU , NCEP40T13AGU , NCEP40T15AGU , NCEP40T15AK , NCEP40T15G , NCEP40T15GU , NCEP40T16LL .
History: AO4818B | AGM205D | BRF4N70
History: AO4818B | AGM205D | BRF4N70
Список транзисторов
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