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NCEP40T11K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEP40T11K
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 110 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 60 nC
   trⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 1050 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0048 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для NCEP40T11K

 

 

NCEP40T11K Datasheet (PDF)

 ..1. Size:763K  ncepower
 ncep40t11k.pdf

NCEP40T11K NCEP40T11K

http://www.ncepower.comNCEP40T11KNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T11K uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switch

 5.1. Size:343K  ncepower
 ncep40t11.pdf

NCEP40T11K NCEP40T11K

http://www.ncepower.com NCEP40T11NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swi

 5.2. Size:1124K  ncepower
 ncep40t11ak.pdf

NCEP40T11K NCEP40T11K

Pb Free Producthttp://www.ncepower.com NCEP40T11AKNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T11AK uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghig

 5.3. Size:331K  ncepower
 ncep40t11ag.pdf

NCEP40T11K NCEP40T11K

Pb Free Producthttp://www.ncepower.com NCEP40T11AGNCE N-Channel Super Trench Power MOSFET Description The NCEP40T11AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 5.4. Size:375K  ncepower
 ncep40t11g.pdf

NCEP40T11K NCEP40T11K

Pb Free Producthttp://www.ncepower.com NCEP40T11GNCE N-Channel Super Trench Power MOSFET Description The NCEP40T11G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

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