Справочник MOSFET. NCEP40T12AGU

 

NCEP40T12AGU Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP40T12AGU
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 24 nC
   trⓘ - Время нарастания: 2.5 ns
   Cossⓘ - Выходная емкость: 435 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0024 Ohm
   Тип корпуса: DFN5X6-8L
     - подбор MOSFET транзистора по параметрам

 

NCEP40T12AGU Datasheet (PDF)

 ..1. Size:301K  ncepower
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NCEP40T12AGU

Pb Free Producthttp://www.ncepower.com NCEP40T12AGUNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP40T12AGU uses Super Trench technology that is VDS =40V,ID =120A uniquely optimized to provide the most efficient high RDS(ON)=2.05m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(F

 5.1. Size:300K  ncepower
ncep40t12gu.pdfpdf_icon

NCEP40T12AGU

http://www.ncepower.com NCEP40T12GUNCE N-Channel Super Trench Power MOSFET General Features Description VDS =40V,ID =120A The NCEP40T12GU uses Super Trench technology that is RDS(ON)=2.05m (typical) @ VGS=10V uniquely optimized to provide the most efficient high RDS(ON)=3.1m (typical) @ VGS=4.5V frequency switching performance. Both conduction and Excellent gat

 6.1. Size:326K  ncepower
ncep40t15a.pdfpdf_icon

NCEP40T12AGU

Pb Free Producthttp://www.ncepower.com NCEP40T15ANCE N-Channel Super Trench Power MOSFET Description The NCEP40T15A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.2. Size:363K  ncepower
ncep40t17g.pdfpdf_icon

NCEP40T12AGU

Pb Free Producthttp://www.ncepower.com NCEP40T17GNCE N-Channel Super Trench Power MOSFET Description The NCEP40T17G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

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