NCEP40T13AGU datasheet, подбор замены

 ..1. Size:303K  ncepower
 ncep40t13agu.pdf 

http //www.ncepower.com NCEP40T13AGU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP40T13AGU uses Super Trench technology that is VDS =40V,ID =130A uniquely optimized to provide the most efficient high RDS(ON)=1.8m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(FOM) switching po

 5.1. Size:338K  ncepower
 ncep40t13gu.pdf 

Pb Free Product http //www.ncepower.com NCEP40T13GU NCE N-Channel Super Trench Power MOSFET Description The NCEP40T13GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.1. Size:326K  ncepower
 ncep40t15a.pdf 

Pb Free Product http //www.ncepower.com NCEP40T15A NCE N-Channel Super Trench Power MOSFET Description The NCEP40T15A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.2. Size:363K  ncepower
 ncep40t17g.pdf 

Pb Free Product http //www.ncepower.com NCEP40T17G NCE N-Channel Super Trench Power MOSFET Description The NCEP40T17G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.3. Size:343K  ncepower
 ncep40t11.pdf 

http //www.ncepower.com NCEP40T11 NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swi

 6.4. Size:351K  ncepower
 ncep40t14g.pdf 

http //www.ncepower.com NCEP40T14G NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP40T14G uses Super Trench technology that is VDS =40V,ID =140A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.6m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.3m (typical) @ VGS=4.5V losses are m

 6.5. Size:301K  ncepower
 ncep40t12agu.pdf 

Pb Free Product http //www.ncepower.com NCEP40T12AGU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP40T12AGU uses Super Trench technology that is VDS =40V,ID =120A uniquely optimized to provide the most efficient high RDS(ON)=2.05m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(F

 6.6. Size:692K  ncepower
 ncep40t19gu.pdf 

http //www.ncepower.com NCEP40T19GU NCE N-Channel Super Trench Power MOSFET Description The NCEP40T19GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency swit

 6.7. Size:1008K  ncepower
 ncep40t15gu.pdf 

NCEP40T15GU http //www.ncepower.com NCE N-Channel Super Trench Power MOSFET General Features Description V =40V,I =150A DS D The NCEP40T15GU uses Super Trench technology that is uniquely R =1.09m , typical@ V =10V DS(ON) GS optimized to provide the most efficient high frequency switching R =1.5m , typical@ V =4.5V DS(ON) GS performance. Both conduction and switching power l

 6.8. Size:726K  ncepower
 ncep40t16ll.pdf 

http //www.ncepower.com NCEP40T16LL NCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =40V,I =160A DS D uniquely optimized to provide the most efficient high frequency R =1.35m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =1.85m , typical @ V =4.5V DS

 6.9. Size:325K  ncepower
 ncep40t17a.pdf 

Pb Free Product http //www.ncepower.com NCEP40T17A NCE N-Channel Super Trench Power MOSFET Description The NCEP40T17A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.10. Size:300K  ncepower
 ncep40t12gu.pdf 

http //www.ncepower.com NCEP40T12GU NCE N-Channel Super Trench Power MOSFET General Features Description VDS =40V,ID =120A The NCEP40T12GU uses Super Trench technology that is RDS(ON)=2.05m (typical) @ VGS=10V uniquely optimized to provide the most efficient high RDS(ON)=3.1m (typical) @ VGS=4.5V frequency switching performance. Both conduction and Excellent gat

 6.11. Size:844K  ncepower
 ncep40t15agu.pdf 

http //www.ncepower.com NCEP40T15AGU NCE N-Channel Super Trench Power MOSFET Description The NCEP40T15AGU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =40V,I =150A DS D switching performance. Both conduction and switching power R =1.15m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely

 6.12. Size:755K  ncepower
 ncep40t15ak.pdf 

http //www.ncepower.com NCEP40T15AK NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP40T15AK uses Super Trench technology that is V =40V,I =150A DS D uniquely optimized to provide the most efficient high frequency R =1.9m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product(FOM)

 6.13. Size:1124K  ncepower
 ncep40t11ak.pdf 

Pb Free Product http //www.ncepower.com NCEP40T11AK NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g hig

 6.14. Size:1132K  ncepower
 ncep40t17ad.pdf 

Pb Free Product http //www.ncepower.com NCEP40T17AD NCE N-Channel Super Trench Power MOSFET Description The NCEP40T17AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g hig

 6.15. Size:763K  ncepower
 ncep40t11k.pdf 

http //www.ncepower.com NCEP40T11K NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switch

 6.16. Size:381K  ncepower
 ncep40t15g.pdf 

http //www.ncepower.com NCEP40T15G NCE N-Channel Super Trench Power MOSFET Description The NCEP40T15G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 6.17. Size:331K  ncepower
 ncep40t11ag.pdf 

Pb Free Product http //www.ncepower.com NCEP40T11AG NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.18. Size:303K  ncepower
 ncep40t17at.pdf 

Pb Free Product http //www.ncepower.com NCEP40T17AT NCE N-Channel Super Trench Power MOSFET Description The NCEP40T17ATuses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.19. Size:375K  ncepower
 ncep40t11g.pdf 

Pb Free Product http //www.ncepower.com NCEP40T11G NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 6.20. Size:367K  ncepower
 ncep40t17ag.pdf 

http //www.ncepower.com NCEP40T17AG NCE N-Channel Super Trench Power MOSFET Description The NCEP40T17AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 6.21. Size:737K  ncepower
 ncep40t14a.pdf 

NCEP40T14A http //www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The NCEP40T14A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . DS(ON) g This device is ideal for high-frequency switchi