NCEP40T17AG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCEP40T17AG
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 170 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 7.2 ns
Cossⓘ - Выходная емкость: 2580 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0017 Ohm
Тип корпуса: DFN5X6-8L
Аналог (замена) для NCEP40T17AG
NCEP40T17AG Datasheet (PDF)
ncep40t17ag.pdf

http://www.ncepower.com NCEP40T17AGNCE N-Channel Super Trench Power MOSFET Description The NCEP40T17AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep40t17a.pdf

Pb Free Producthttp://www.ncepower.com NCEP40T17ANCE N-Channel Super Trench Power MOSFET Description The NCEP40T17A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep40t17ad.pdf

Pb Free Producthttp://www.ncepower.com NCEP40T17ADNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T17AD uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghig
ncep40t17at.pdf

Pb Free Producthttp://www.ncepower.com NCEP40T17ATNCE N-Channel Super Trench Power MOSFET Description The NCEP40T17ATuses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Другие MOSFET... NCEP40T12GU , NCEP40T13AGU , NCEP40T15AGU , NCEP40T15AK , NCEP40T15G , NCEP40T15GU , NCEP40T16LL , NCEP40T17AD , IRF2807 , NCEP40T17AT , NCEP40T17G , NCEP40T19GU , NCEP40T20A , NCEP40T20AGU , NCEP40T20ALL , NCEP40T20ASL , NCEP40T20GU .
History: VBM17R10 | STN442D | CS7N70F | NCE60H15AD | IPU95R450P7
History: VBM17R10 | STN442D | CS7N70F | NCE60H15AD | IPU95R450P7



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