NCEP40T20A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCEP40T20A
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 270 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 200 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 91 nC
Время нарастания (tr): 8 ns
Выходная емкость (Cd): 2320.5 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0022 Ohm
Тип корпуса: TO-220
Аналог (замена) для NCEP40T20A
NCEP40T20A Datasheet (PDF)
ncep40t20a.pdf
http://www.ncepower.comNCEP40T20ANCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T20A uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switch
ncep40t20agu.pdf
Pb Free Producthttp://www.ncepower.com NCEP40T20AGUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T20AGU uses Super Trench technology thatGeneral Featuresis uniquely optimized to provide the most efficient high V =40V,I =200ADS Dfrequency switching performance. Both conduction andR =0.95m , typical @ V =10VDS(ON) GSswitching power losses are minimized d
ncep40t20all.pdf
Pb Free Producthttp://www.ncepower.comNCEP40T20ALLNCE N-Channel Super Trench Power MOSFETDescriptionThe series of devices uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =40V,I =250ADS Dswitching performance. Both conduction and switching power R =1.1m , typical @ V =10VDS(ON) GSlosses are minimiz
ncep40t20asl.pdf
http://www.ncepower.comNCEP40T20ASLNCE N-Channel Super Trench Power MOSFETDescriptionThe series of devices uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =40V,I =340ADS Dswitching performance. Both conduction and switching power R =1.1m , typical @ V =10VDS(ON) GSlosses are minimized due to an extr
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