NCEP40T20ASL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCEP40T20ASL
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 270 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 340 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 72 nC
trⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 2150 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0013 Ohm
Тип корпуса: STOLL
- подбор MOSFET транзистора по параметрам
NCEP40T20ASL Datasheet (PDF)
ncep40t20asl.pdf

http://www.ncepower.comNCEP40T20ASLNCE N-Channel Super Trench Power MOSFETDescriptionThe series of devices uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =40V,I =340ADS Dswitching performance. Both conduction and switching power R =1.1m , typical @ V =10VDS(ON) GSlosses are minimized due to an extr
ncep40t20agu.pdf

Pb Free Producthttp://www.ncepower.com NCEP40T20AGUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T20AGU uses Super Trench technology thatGeneral Featuresis uniquely optimized to provide the most efficient high V =40V,I =200ADS Dfrequency switching performance. Both conduction andR =0.95m , typical @ V =10VDS(ON) GSswitching power losses are minimized d
ncep40t20all.pdf

Pb Free Producthttp://www.ncepower.comNCEP40T20ALLNCE N-Channel Super Trench Power MOSFETDescriptionThe series of devices uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =40V,I =250ADS Dswitching performance. Both conduction and switching power R =1.1m , typical @ V =10VDS(ON) GSlosses are minimiz
ncep40t20a.pdf

http://www.ncepower.comNCEP40T20ANCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T20A uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switch
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SPB20N60C3
History: SPB20N60C3



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