NCEP50P80 datasheet, аналоги, основные параметры

Наименование производителя: NCEP50P80

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 180 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 50 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 1155 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm

Тип корпуса: TO-220

Аналог (замена) для NCEP50P80

- подборⓘ MOSFET транзистора по параметрам

 

NCEP50P80 даташит

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 ncep50p80.pdf pdf_icon

NCEP50P80

http //www.ncepower.com NCEP50P80 NCE P-Channel Super Trench Power MOSFET Description The NCEP50P80 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 0.1. Size:344K  ncepower
 ncep50p80ak.pdf pdf_icon

NCEP50P80

http //www.ncepower.com NCEP50P80AK NCE P-Channel Super Trench Power MOSFET Description The NCEP50P80AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 0.2. Size:339K  ncepower
 ncep50p80a.pdf pdf_icon

NCEP50P80

http //www.ncepower.com NCEP50P80A NCE P-Channel Super Trench Power MOSFET Description The NCEP50P80A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

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