NCEP6050AQU. Аналоги и основные параметры
Наименование производителя: NCEP6050AQU
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 2 ns
Cossⓘ - Выходная емкость: 315 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0088 Ohm
Тип корпуса: DFN3.3X3.3-8L
Аналог (замена) для NCEP6050AQU
- подборⓘ MOSFET транзистора по параметрам
NCEP6050AQU даташит
ncep6050aqu.pdf
http //www.ncepower.com NCEP6050AQU NCE N-Channel Super Trench Power MOSFET Description The NCEP6050AQU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =50A DS D frequency switching performance. Both conduction and R =6.5m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an extremely low
ncep6050qu.pdf
http //www.ncepower.com NCEP6050QU NCE N-Channel Super Trench Power MOSFET Description The NCEP6050QU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =50A DS D frequency switching performance. Both conduction and R =6.5m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an extremely low c
ncep6055gu.pdf
http //www.ncepower.com NCEP6055GU NCE N-Channel Super Trench Power MOSFET Description The NCEP6055GU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =60V,I =55A DS D frequency switching performance. Both conduction and R =6.5m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an extremely low c
ncep6055agu.pdf
http //www.ncepower.com NCEP6055AGU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP6055AGU uses Super Trench technology that is V =60V,I =55A DS D uniquely optimized to provide the most efficient high frequency R =6.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.7m (typical) @ V =4.5V DS(ON) GS l
Другие IGBT... NCEP50P80A, NCEP50P80AK, NCEP6012AS, NCEP6015AS, NCEP6016AS, NCEP6035AG, NCEP6035AQU, NCEP6040AGU, RU7088R, NCEP6050QU, NCEP6055AGU, NCEP6055GU, NCEP6060AGU, NCEP6060GU, NCEP6080G, NCEP6090AGU, NCEP6090AK
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Список транзисторов
Обновления
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