MRF134 - описание и поиск аналогов

 ..1. Size:205K  motorola
 mrf134.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF134/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF134 . . . designed for wideband large signal amplifier and oscillator applications up to 400 MHz range. Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB 5.0 W, to 400 MHz Efficiency

 ..2. Size:493K  macom
 mrf134.pdf 

MRF134 The RF MOSFET Line Broadband RF Power FET M/A-COM Products Released - Rev. 05202009 5.0W, to 400MHz, 28V Product Image Designed for wideband large signal amplifier and oscillator applications up to 400 MHz range. N Channel enhancement mode Guaranteed 28V, 150 MHz performance Output power = 5.0 watts Minimum gain = 11 dB Efficiency = 55% (Typical)

 0.1. Size:205K  motorola
 mrf134re.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF134/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF134 . . . designed for wideband large signal amplifier and oscillator applications up to 400 MHz range. Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB 5.0 W, to 400 MHz Efficiency

 9.1. Size:98K  motorola
 mrf1375r.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1375/D The RF Line Microwave Pulse MRF1375 Power Transistor Designed for 1025 1150 MHz pulse common base amplifier applications such as TACAN and DME. Guaranteed Performance @ 1090 MHz Output Power = 375 Watts Peak 375 W (PEAK), 1025 1150 MHz Gain = 6.7 dB Min 7.5 dB (Typ) MICROWAVE POWER 100% Tested for

 9.2. Size:196K  motorola
 mrf137.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF137/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF137 . . . designed for wideband large signal output and driver stages up to 400 MHz range. Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB 30 W, to 400 MHz Efficiency 60% (Typical)

 9.3. Size:196K  motorola
 mrf137re.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF137/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF137 . . . designed for wideband large signal output and driver stages up to 400 MHz range. Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB 30 W, to 400 MHz Efficiency 60% (Typical)

 9.4. Size:284K  motorola
 mrf136 mrf136y.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF136/D The RF MOSFET Line RF Power MRF136 Field-Effect Transistors MRF136Y N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push pull configuration. Guaranteed 28 Volt, 150 MHz Performance 15 W, 30 W,

 9.5. Size:149K  motorola
 mrf138re.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF138/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF138 . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. Superior High Order IMD Specified 28 Volts, 30 MHz Characteristics Output Power = 30 Watts 30 W, 175 MH

 9.6. Size:284K  motorola
 mrf136re.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF136/D The RF MOSFET Line RF Power MRF136 Field-Effect Transistors MRF136Y N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push pull configuration. Guaranteed 28 Volt, 150 MHz Performance 15 W, 30 W,

 9.7. Size:98K  motorola
 mrf1375.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1375/D The RF Line Microwave Pulse MRF1375 Power Transistor Designed for 1025 1150 MHz pulse common base amplifier applications such as TACAN and DME. Guaranteed Performance @ 1090 MHz Output Power = 375 Watts Peak 375 W (PEAK), 1025 1150 MHz Gain = 6.7 dB Min 7.5 dB (Typ) MICROWAVE POWER 100% Tested for

 9.8. Size:149K  motorola
 mrf138.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF138/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF138 . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. Superior High Order IMD Specified 28 Volts, 30 MHz Characteristics Output Power = 30 Watts 30 W, 175 MH

 9.9. Size:431K  macom
 mrf137.pdf 

MRF137 The RF MOSFET Line M/A-COM Products Released - Rev. 05202009 30W, to 400MHz, 28V Product Image Designed for wideband large signal output and drive stages up to 400 MHz range. N Channel enhancement mode Guaranteed 28 V, 150 MHz performance Output power = 30 W Minimum gain = 13 dB Efficiency 60% (Typical) Small and large signal characterizati

 9.10. Size:598K  macom
 mrf136.pdf 

MRF136 The RF MOSFET Line M/A-COM Products Released - Rev. 05202009 15W, to 400MHz, 28V Product Image Designed for wideband large signal amplifier and oscillator applications Up to 400 MHz range, in single-ended configuration N Channel enhancement mode . Guaranteed 28 volt, 150 MHz performance Output power = 15 watts Narrowband gain = 16 dB (Typ.) Efficiency =