MRF1507. Аналоги и основные параметры
Наименование производителя: MRF1507
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 62.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
Cossⓘ - Выходная емкость: 40.5 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.7692 Ohm
Тип корпуса: CASE466-02
Аналог (замена) для MRF1507
- подборⓘ MOSFET транзистора по параметрам
MRF1507 даташит
..1. Size:206K motorola
mrf1507 mrf1507t1.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1507/D The RF MOSFET Line MRF1507 RF Power Field Effect Transistor MRF1507T1 N Channel Enhancement Mode Lateral MOSFETs The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband 8 W, 520 MHz, 7.5 V performance of this device makes it ideal for
0.1. Size:206K motorola
mrf1507rev1.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1507/D The RF MOSFET Line MRF1507 RF Power Field Effect Transistor MRF1507T1 N Channel Enhancement Mode Lateral MOSFETs The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband 8 W, 520 MHz, 7.5 V performance of this device makes it ideal for
8.1. Size:164K motorola
mrf15030.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15030/D The RF Line NPN Silicon MRF15030 RF Power Transistor Designed for 26 volts microwave large signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400 1600 MHz. Specified 26 Volts, 1490 MHz, Class AB Characteristics
8.2. Size:158K motorola
mrf15030rev7.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15030/D The RF Line NPN Silicon MRF15030 RF Power Transistor Designed for 26 volts microwave large signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400 1600 MHz. Specified 26 Volts, 1490 MHz, Class AB Characteristics
8.3. Size:164K motorola
mrf15060rev0.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15060/D The RF Sub Micron Bipolar Line MRF15060 RF Power Bipolar Transistors MRF15060S Designed for broadband commercial and industrial applications at frequen- cies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large signal, common emitter class A and 60 W, 1.
8.4. Size:103K motorola
mrf1500.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1500/D The RF Line Microwave Pulse MRF1500 Power Transistor Motorola Preferred Device Designed for 1025 1150 MHz pulse common base amplifier applications such as DME. Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak 500 W (PEAK), 1025 1150 MHz Gain = 5.2 dB Min MICROWAVE POWER 100% Tested
8.5. Size:164K motorola
mrf15060 mrf15060s.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15060/D The RF Sub Micron Bipolar Line MRF15060 RF Power Bipolar Transistors MRF15060S Designed for broadband commercial and industrial applications at frequen- cies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large signal, common emitter class A and 60 W, 1.
8.6. Size:210K motorola
mrf15090.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15090/D Advance Information The RF Line MRF15090 NPN Silicon RF Power Transistor Designed for 26 volts microwave large signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400 1600 MHz. 90 W, 1.5 GHz Specified 26 Volts, 1
8.7. Size:103K motorola
mrf1500r.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1500/D The RF Line Microwave Pulse MRF1500 Power Transistor Motorola Preferred Device Designed for 1025 1150 MHz pulse common base amplifier applications such as DME. Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak 500 W (PEAK), 1025 1150 MHz Gain = 5.2 dB Min MICROWAVE POWER 100% Tested
8.8. Size:128K motorola
mrf150.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF150/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF150 Designed primarily for linear large signal output stages up to 150 MHz frequency range. Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) 150 W, to 150 MHz Efficiency = 45% (T
8.9. Size:148K motorola
mrf150rev8.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF150/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF150 Designed primarily for linear large signal output stages up to 150 MHz frequency range. Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) 150 W, to 150 MHz Efficiency = 45% (T
8.10. Size:128K motorola
mrf150re.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF150/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF150 Designed primarily for linear large signal output stages up to 150 MHz frequency range. Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) 150 W, to 150 MHz Efficiency = 45% (T
Другие IGBT... MRF136Y, MRF137, MRF138, MRF140, MRF141, MRF141G, MRF148, MRF150, IRF4905, MRF1507T1, MRF151, MRF151G, MRF154, MRF156, MRF156R, MRF157, MRF158
