MRF175GU. Аналоги и основные параметры
Наименование производителя: MRF175GU
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 400 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 65 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 40 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 26 A
Tj ⓘ - Максимальная температура канала: 200 °C
Электрические характеристики
Cossⓘ - Выходная емкость: 200 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.5 Ohm
Тип корпуса: CASE375-04
Аналог (замена) для MRF175GU
- подборⓘ MOSFET транзистора по параметрам
MRF175GU даташит
mrf175gu.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175GU/D The RF MOSFET Line RF Power MRF175GU Field-Effect Transistors MRF175GV N Channel Enhancement Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state tra
mrf175gu mrf175gv.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175GU/D The RF MOSFET Line RF Power MRF175GU Field-Effect Transistors MRF175GV N Channel Enhancement Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state tra
mrf175lurev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line RF Power MRF175LU Field-Effect Transistors MRF175LV N Channel Enhancement Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state tr
mrf175lu.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF175LU/D The RF MOSFET Line RF Power MRF175LU Field-Effect Transistors MRF175LV N Channel Enhancement Mode . . . designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid st
Другие IGBT... MRF164W, MRF166, MRF166C, MRF166W, MRF171, MRF173, MRF173CQ, MRF174, NCEP15T14, MRF175GV, MRF175LU, MRF175LV, MRF176GU, MRF176GV, MRF177, MRF177M, MRF184
History: PM5Q4BA
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Список транзисторов
Обновления
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