Справочник MOSFET. BRCS050N04BD

 

BRCS050N04BD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BRCS050N04BD
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 347 W
   Предельно допустимое напряжение сток-исток |Uds|: 40 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3 V
   Максимально допустимый постоянный ток стока |Id|: 196 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 70 nC
   Время нарастания (tr): 30 ns
   Выходная емкость (Cd): 210 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.01 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для BRCS050N04BD

 

 

BRCS050N04BD Datasheet (PDF)

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 brcs050n04bd.pdf

BRCS050N04BD BRCS050N04BD

BRCS050N04BD Rev.B Nov.-2022 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , Ultra Low On-Resistance,fast switching,HF Product. / Applications PFC

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 brcs050n04ra.pdf

BRCS050N04BD BRCS050N04BD

BRCS050N04RA Rev.A Nov.-2022 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications PFC These de

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 brcs050n04yb.pdf

BRCS050N04BD BRCS050N04BD

BRCS050N04YB Rev.A Jul.-2023 DATA SHEET / Descriptions PDFN 33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features V (V) = 40V I =57A (V = 20V) DS D GS RDS(ON)@10V5mR(Typ.4.5mR) RDS(ON)@4.5V10mR(Typ.6.2mR) HF Product. / Applications

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 brcs050n03zc.pdf

BRCS050N04BD BRCS050N04BD

BRCS050N03ZC Rev.B Jul.-2022 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;HF

 5.2. Size:1342K  blue-rocket-elect
 brcs050n03yb.pdf

BRCS050N04BD BRCS050N04BD

BRCS050N03YB Rev.A May.-2023 DATA SHEET / Descriptions PDFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN33A-8L Plastic Package. / Features V (V) = 30V DSI =55 A (V = 20V) D GS RDS(ON)@10V5mR(Typ.4.3mR) HF Product. / Applications

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 brcs050n03dsc.pdf

BRCS050N04BD BRCS050N04BD

BRCS050N03DSC Rev.A Jul.-2023 DATA SHEET / Descriptions SOP-8 N MOS Double N-CHANNEL MOSFET in a SOP-8 Plastic Package. / Features V (V)=30V I =20A DS DRDS(ON)@10V

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 brcs050n03dp.pdf

BRCS050N04BD BRCS050N04BD

BRCS050N03DP Rev.B Jul.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching, HF Product. DS(on) rss / Applications

 5.5. Size:1201K  blue-rocket-elect
 brcs050n085hra.pdf

BRCS050N04BD BRCS050N04BD

BRCS050N085HRA Rev.A Sep.-2021 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications PFC These

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