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BRCS060N04SZC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BRCS060N04SZC
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 37 W
   Предельно допустимое напряжение сток-исток |Uds|: 40 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.5 V
   Максимально допустимый постоянный ток стока |Id|: 60 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 20 nC
   Время нарастания (tr): 2 ns
   Выходная емкость (Cd): 390 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.009 Ohm
   Тип корпуса: PDFN5X6

 Аналог (замена) для BRCS060N04SZC

 

 

BRCS060N04SZC Datasheet (PDF)

 ..1. Size:1822K  blue-rocket-elect
 brcs060n04szc.pdf

BRCS060N04SZC BRCS060N04SZC

BRCS060N04SZC Rev.C Jul.-2022 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal DS(ON)resistan

 4.1. Size:1746K  blue-rocket-elect
 brcs060n04ym.pdf

BRCS060N04SZC BRCS060N04SZC

BRCS060N04YM Rev.D Mar.-2023 DATA SHEET / Descriptions PDFN56A N Dual N-CHANNEL MOSFET in a PDFN56A Plastic Package. / Features Dual N-Ch VDS(V)=40V ID=60.2A RDS(ON)

 4.2. Size:1727K  blue-rocket-elect
 brcs060n04dp.pdf

BRCS060N04SZC BRCS060N04SZC

BRCS060N04DP Rev.A Aug.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features VDS(V)=40V ID=70A RDS(ON)@10V

 5.1. Size:798K  blue-rocket-elect
 brcs060n03zc.pdf

BRCS060N04SZC BRCS060N04SZC

BRCS060N03ZC Rev.B May.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. / Applicat

 5.2. Size:648K  blue-rocket-elect
 brcs060n03yb.pdf

BRCS060N04SZC BRCS060N04SZC

BRCS060N03YB Rev.A Aug.-2021 DATA SHEET / Descriptions PDFN 33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID =40 A (VGS = 20V) RDS(ON)@10V6mR(Typ.4.7mR) HF Product. / Applications DC/DC

 5.3. Size:1227K  blue-rocket-elect
 brcs060n03dp.pdf

BRCS060N04SZC BRCS060N04SZC

BRCS060N03DP Rev.A Jun.-2022 DATA SHEET / Descriptions TO-252 N MOS N-Channel Enhancement Mode Field Effect Transistor in a TO-252 Plastic Package. / Features VDS (V) = 30V ID =67A (VGS = 20V) RDS(ON)@10V6mR HF Product. / Applications DC/DC , DC/DC C

 5.4. Size:649K  blue-rocket-elect
 brcs060n03zb.pdf

BRCS060N04SZC BRCS060N04SZC

BRCS060N03ZB Rev.A Nov.-2020 DATA SHEET / Descriptions DFN 3*3A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 3*3A-8L Plastic Package. / Features VDS (V) = 30V ID =40 A (VGS = 20V) RDS(ON)@10V6mR(Typ.4.7mR) HF Product. / Applications DC/DC

 5.5. Size:1297K  blue-rocket-elect
 brcs060n08hzc.pdf

BRCS060N04SZC BRCS060N04SZC

BRCS060N08HZC Rev.A Jun.-2021 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low RDS(ON) to minimize conductive loss, low Gate Charge for fast switching, Low Thermal resistance,

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