Справочник MOSFET. FQD17P06

 

FQD17P06 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FQD17P06

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 44 W

Предельно допустимое напряжение сток-исток (Uds): 60 V

Предельно допустимое напряжение затвор-исток (Ugs): 25 V

Максимально допустимый постоянный ток стока (Id): 12 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 21 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.135 Ohm

Тип корпуса: TO252_DPAK

Аналог (замена) для FQD17P06

 

 

FQD17P06 Datasheet (PDF)

1.1. fqd17p06 fqu17p06.pdf Size:721K _fairchild_semi

FQD17P06 FQD17P06

January 2009 QFET FQD17P06 / FQU17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.135? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 80 pF) This advanced technology has been especially tailored t

1.2. fqd17p06tf fqd17p06tm.pdf Size:804K _fairchild_semi

FQD17P06 FQD17P06

January 2009 QFET® FQD17P06 / FQU17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -12A, -60V, RDS(on) = 0.135Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 21 nC) planar stripe, DMOS technology. • Low Crss ( typical 80 pF) This advanced technology has been especia

 5.1. fqd17n08l fqu17n08l.pdf Size:555K _fairchild_semi

FQD17P06 FQD17P06

December 2000 TM QFET QFET QFET QFET FQD17N08L / FQU17N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.9A, 80V, RDS(on) = 0.1? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.8 nC) planar stripe, DMOS technology. Low Crss ( typical 29 pF) This advanced technology is

5.2. fqd17n08ltf fqd17n08ltm.pdf Size:554K _fairchild_semi

FQD17P06 FQD17P06

December 2000 TM QFET QFET QFET QFET FQD17N08L / FQU17N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 12.9A, 80V, RDS(on) = 0.1Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 8.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 29 pF) This advanced

Другие MOSFET... FQD13N06 , FQD13N06L , FQD13N10 , NDS8434 , FQD13N10L , MTD3055V , FQD16N25C , FQD17N08L , IRFZ24N , FQD18N20V2 , MTD3055VL , FQD19N10 , FQA24N50 , FQD19N10L , FQP6N70 , FQD1N60C , FQP50N06 .

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