Справочник MOSFET. FQD17P06

 

FQD17P06 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQD17P06
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 44 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.135 Ohm
   Тип корпуса: TO252 DPAK
 

 Аналог (замена) для FQD17P06

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQD17P06 Datasheet (PDF)

 ..1. Size:721K  fairchild semi
fqd17p06 fqu17p06.pdfpdf_icon

FQD17P06

January 2009QFETFQD17P06 / FQU17P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.135 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 80 pF)This advanced technology has been especia

 0.1. Size:804K  fairchild semi
fqd17p06tf fqd17p06tm fqu17p06tu.pdfpdf_icon

FQD17P06

January 2009QFETFQD17P06 / FQU17P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -12A, -60V, RDS(on) = 0.135 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 80 pF)This advanced technology has been especia

 9.1. Size:555K  fairchild semi
fqd17n08l fqu17n08l.pdfpdf_icon

FQD17P06

December 2000TMQFETQFETQFETQFETFQD17N08L / FQU17N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.9A, 80V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.8 nC)planar stripe, DMOS technology. Low Crss ( typical 29 pF)This advanced

 9.2. Size:554K  fairchild semi
fqd17n08ltf fqd17n08ltm.pdfpdf_icon

FQD17P06

December 2000TMQFETQFETQFETQFETFQD17N08L / FQU17N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 12.9A, 80V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.8 nC)planar stripe, DMOS technology. Low Crss ( typical 29 pF)This advanced

Другие MOSFET... FQD13N06 , FQD13N06L , FQD13N10 , NDS8434 , FQD13N10L , MTD3055V , FQD16N25C , FQD17N08L , 20N50 , FQD18N20V2 , MTD3055VL , FQD19N10 , FQA24N50 , FQD19N10L , FQP6N70 , FQD1N60C , FQP50N06 .

 

 
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