FQP6N70 - описание и поиск аналогов

April 2000 TM QFET QFET QFET QFET 700V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.2A, 700V, RDS(on) = 1.5 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technology has bee

QFET FQP6N50C 500V N-Channel MOSFET Features Description 5.5 A, 500 V, RDS(on) = 1.2 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 19 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typical 15 pF) minimize

April 2000 TM QFET QFET QFET QFET FQP6N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.2A, 600V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been esp

February 2006 TM FRFET FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description 6A, 400V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 16nC) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typi

TM QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6A, 900V, RDS(on) = 2.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.5A, 500V, RDS(on) = 1.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 17 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been e

QFET FQP6N60C/FQPF6N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 600V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 7 pF) This advanced technology has been especially tailored to

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.5A, 250V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.6 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been es

April 2000 TM QFET QFET QFET QFET 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.8A, 900V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been es

May 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.4A, 150V, RDS(on) = 0.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.5 nC) planar stripe, DMOS technology. Low Crss ( typical 9.6 pF) This advanced technology has been es

September 2000 TM QFET FQP6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailo

TM QFET FQP6N80C/FQPF6N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 8 pF) This advanced technology has been especially tailored to

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

TM QFET FQP6N80C/FQPF6N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 8 pF) This advanced technology has been especially tailored to

isc N-Channel MOSFET Transistor FQP6N80C FEATURES Drain Current I = 22A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB