BRCS200P02MC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BRCS200P02MC
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6.4 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 13 nC
trⓘ - Время нарастания: 29.2 ns
Cossⓘ - Выходная емкость: 600 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
Тип корпуса: SOT23
Аналог (замена) для BRCS200P02MC
BRCS200P02MC Datasheet (PDF)
brcs200p02mc.pdf
BRCS200P02MC Rev.A Nov.-2023 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features V (V) = -20V I = -6.4A DS DRDS(ON)@-4.5V22m(Type.20m) RDS(ON)@-2.5V30m(Type.26m) RDS(ON)@-1.8V100m(Type.35m) HF Product. / Applications
brcs200p02zj.pdf
BRCS200P02ZJ Rev.A Dec.-2023 DATA SHEET / Descriptions DFN22B-6L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN22B-6L Plastic Package. / Features V (V) = -20V I = -9.5A DS DRDS(ON)@-4.5V22m(Type.20m) RDS(ON)@-2.5V30m(Type.26m) RDS(ON)@-1.8V100m(Type.35m)
brcs200p02ya.pdf
BRCS200P02YA Rev.A Dec.-2023 DATA SHEET / Descriptions PDFN33-8L P MOS Double P-CHANNEL MOSFET in a PDFN33-8L Plastic Package. / Features V =-20V I =-22.8A DS DRDS(ON)@-4.5V22m(Type.20m) RDS(ON)@-2.5V30m(Type.26m) RDS(ON)@-1.8V100m(Type.35m) HF Product. / Appli
brcs200p012mf.pdf
BRCS200P012MF Rev.A Dec.-2023 DATA SHEET / Descriptions SOT23-6 P MOS P- CHANNEL MOSFET in a SOT23-6 Plastic Package. / Features V (V) = -12V I = -8.0A DS DRDS(ON)@-10V20m(Type.18m) RDS(ON)@-4.5V25m(Type.21m) RDS(ON)@-2.5V30m(Type.27m) RDS(ON)@-1.8V50m(Type.40m) HF P
brcs200p03dsc.pdf
BRCS200P03DSC Rev.A Mar.-2023 DATA SHEET / Descriptions SOP-8 P Dual P-CHANNEL MOSFET in a SOP-8 Plastic Package . / Features Dual P-CHANNEL VDS(V)=-30V ID=-7.1A RDS(ON)
brcs200p03zc.pdf
BRCS200P03ZC Rev.A May.-2022 DATA SHEET / Descriptions PDFN56 P P-Channel MOSFET in a PDFN56 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;HF P
brcs200p03zb.pdf
BRCS200P03ZB Rev.A May.-2020 DATA SHEET / Descriptions DFN 33A-8L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN 33A-8L Plastic Package. / Features VDS (V) = -30V ID = -19 A (VGS = -20V) HF Product. / Applications Power
brcs200p03dp.pdf
BRCS200P03DP Rev.A Aug.-2022 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Low On-Resistance, fast switching,HF Product. / Applications DC/DC Power Management of Industrial DC/DC Converter.
brcs200p012mc.pdf
BRCS200P012MC Rev.A Jun.-2023 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features V (V) = -12V I = -8.0A DS DRDS(ON)@-10V20m(Type.18m) RDS(ON)@-4.5V25m(Type.21m) RDS(ON)@-2.5V30m(Type.27m) RDS(ON)@-1.8V50m(Type.40m) HF P
brcs200p03yb.pdf
BRCS200P03YB Rev.A May.-2022 DATA SHEET / Descriptions PDFN33A-8L P P-Channel MOSFET in a PDFN33A-8L Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resi
brcs200p012zj.pdf
BRCS200P012ZJ Rev.A Jun.-2023 DATA SHEET / Descriptions DFN22B-6L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN22B-6L Plastic Package. / Features V (V) = -12V I = -20A DS DRDS(ON)@-4.5V20m(Typ. 17.2m) RDS(ON)@-2.5V30m(Typ. 23.4m) HF Product. / Applications
brcs200p03zj.pdf
BRCS200P03ZJ Rev.A Sep.-2023 DATA SHEET / Descriptions DFN22B-6L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN22B-6L Plastic Package. / Features V (V)=-30V I =-7.8A DS DR
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Список транзисторов
Обновления
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