Справочник MOSFET. FQD1N80

 

FQD1N80 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQD1N80
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 5.5 nC
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 20 Ohm
   Тип корпуса: TO252 DPAK
 

 Аналог (замена) для FQD1N80

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQD1N80 Datasheet (PDF)

 ..1. Size:731K  fairchild semi
 fqd1n80tf fqd1n80tm fqd1n80 fqu1n80 fqu1n80tu.pdf pdf_icon

FQD1N80

January 2009QFETFQD1N80 / FQU1N80 800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 800V, RDS(on) = 20 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5nC)planar stripe, DMOS technology. Low Crss ( typical 2.7pF)This advanced technology has been especially

 ..2. Size:1446K  onsemi
 fqd1n80 fqu1n80.pdf pdf_icon

FQD1N80

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:541K  fairchild semi
 fqd1n60tf fqd1n60tm fqu1n60tu.pdf pdf_icon

FQD1N80

April 2000TMQFETQFETQFETQFETFQD1N60 / FQU1N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology

 9.2. Size:827K  fairchild semi
 fqd1n50tf fqd1n50tm fqu1n50tu.pdf pdf_icon

FQD1N80

January 2009QFETFQD1N50 / FQU1N50500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.1A, 500V, RDS(on) = 9.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has been especia

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FQD18N20V2 , MTD3055VL , FQD19N10 , FQA24N50 , FQD19N10L , FQP6N70 , FQD1N60C , FQP50N06 , STP80NF70 , FQA28N50 , FQD20N06 , FQD2N100 , FQD2N60C , FQPF3N25 , FQD2N80 , FQP4N20L , FQD2N90 .

History: BRD20N03

 

 
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