FQD20N06 - аналоги, параметры транзистора - Справочник транзисторов

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January 2009 QFET FQD20N06 / FQU20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 16.8A, 60V, RDS(on) = 0.063 @ VGS = 10V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 11.5 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especi

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November 2013 FQD20N06 N-Channel QFET MOSFET 60 V, 16.8 A, 63 m Description Features This N-Channel enhancement mode power MOSFET is 16.8 A, 60 V, RDS(on) = 63 m (Max.) @ VGS = 10V, produced using Fairchild Semiconductor s proprietary ID = 8.4 A planar stripe and DMOS technology. This advanced Low Gate Charge (Typ.11.5 nC) MOSFET technology has been especially ta

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FQD20N06 www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise note

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May 2001 TM QFET FQD20N06L / FQU20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 17.2A, 60V, RDS(on) = 0.06 @ VGS = 10V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.5 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been es