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FQD2N100 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FQD2N100

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 50 W

Предельно допустимое напряжение сток-исток (Uds): 1000 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Максимально допустимый постоянный ток стока (Id): 1.6 A

Максимальная температура канала (Tj): 150 °C

Сопротивление сток-исток открытого транзистора (Rds): 9 Ohm

Тип корпуса: TO252_DPAK

Аналог (замена) для FQD2N100

 

 

FQD2N100 Datasheet (PDF)

1.1. fqd2n100 fqu2n100.pdf Size:731K _fairchild_semi

FQD2N100
FQD2N100

January 2009 QFET FQD2N100/FQU2N100 1000V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.6A, 1000V, RDS(on) = 9? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5 pF) This advanced technology has been especially tailored to

5.1. fqd2n80 fqu2n80.pdf Size:724K _fairchild_semi

FQD2N100
FQD2N100

January 2008 QFET FQD2N80 / FQU2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.8A, 800V, RDS(on) = 6.3? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to

5.2. fqd2n60ctm.pdf Size:557K _fairchild_semi

FQD2N100
FQD2N100

November 2013 FQD2N60C / FQU2N60C N-Channel QFET® MOSFET 600 V, 1.9 A, 4.7 Ω Features Description • 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, This N-Channel enhancement mode power MOSFET is ID = 0.95 A produced using Fairchild Semiconductor’s proprietary • Low Gate Charge (Typ. 8.5 nC) planar stripe and DMOS technology. This advanced • Low Crss (Typ. 4.3 pF)

 5.3. fqd2n90 fqu2n90.pdf Size:841K _fairchild_semi

FQD2N100
FQD2N100

January 2009 QFET FQD2N90 / FQU2N90 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.7A, 900V, RDS(on) = 7.2 ? @ VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored

5.4. fqd2n60c fqu2n60c.pdf Size:762K _fairchild_semi

FQD2N100
FQD2N100

January 2009 QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description 1.9A, 600V, RDS(on) = 4.7? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 8.5 nC) DMOS technology. Low Crss (typical 4.3 pF) This advanced technology has been especially tailored to mini-

Другие MOSFET... FQA24N50 , FQD19N10L , FQP6N70 , FQD1N60C , FQP50N06 , FQD1N80 , FQA28N50 , FQD20N06 , IRFZ44A , FQD2N60C , FQPF3N25 , FQD2N80 , FQP4N20L , FQD2N90 , FQD2P40 , FQD30N06 , FQD3N60CTM_WS .

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MOSFET: MTBA6C15Q8 | MTBA6C15J4 | MTBA6C12Q8 | MTBA5C10V8 | MTB75N05HDT4 | MTB6D0N03BH8 | MTB60P15H8 | MTB5D0P03Q8 | MTB5D0P03J3 | MTB50P03HDLT4G | MTB50P03HDLT4 | MTB50P03HDLG | MTB3D0N03BH8 | MTB30P06VT4G | MTB30P06VT4 |
 


 

 

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