FQP4N20L datasheet, аналоги, основные параметры

Наименование производителя: FQP4N20L  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 45 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.35 Ohm

Тип корпуса: TO220

  📄📄 Копировать 

Аналог (замена) для FQP4N20L

- подборⓘ MOSFET транзистора по параметрам

 

FQP4N20L даташит

 ..1. Size:902K  fairchild semi
 fqp4n20l.pdf pdf_icon

FQP4N20L

October 2013 FQP4N20L N-Channel QFET MOSFET 200 V, 3.8 A, 1.35 Description Features These N-Channel enhancement mode power field effect 3.8 A, 200 V, RDS(on) = 1.35 (Max.) @ VGS = 10 V, ID = 1.9 A transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 4.0 nC) technology is especially tailored

 ..2. Size:1067K  onsemi
 fqp4n20l.pdf pdf_icon

FQP4N20L

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:677K  fairchild semi
 fqp4n20.pdf pdf_icon

FQP4N20L

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.6A, 200V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been

 7.2. Size:3178K  cn vbsemi
 fqp4n20.pdf pdf_icon

FQP4N20L

FQP4N20 www.VBsemi.tw N-Channel 200 V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) 200 TrenchFET Power MOSFET RDS(on) ( )VGS = 10 V 0.85 175 C Junction Temperature Qg (Max.) (nC) 13 PWM Optimized 100 % Rg Tested Qgs (nC) 3.0 Compliant to RoHS Directive 2002/95/EC Qgd (nC) 7.9 Configuration Single APPLICATIONS Primary Side Switch TO-220AB D G G

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... FQP50N06, FQD1N80, FQA28N50, FQD20N06, FQD2N100, FQD2N60C, FQPF3N25, FQD2N80, IRF520, FQD2N90, FQD2P40, FQD30N06, FQD3N60CTMWS, FQB9P25, FQD3P50, FQD3P50TMF085, FQD4N20