FQB9P25 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FQB9P25
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 120 W
Предельно допустимое напряжение сток-исток |Uds|: 250 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 9.4 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 29 nC
Сопротивление сток-исток открытого транзистора (Rds): 0.62 Ohm
Тип корпуса: TO263 D2PAK
FQB9P25 Datasheet (PDF)
fqb9p25.pdf
November 2013FQB9P25P-Channel QFET MOSFET-250 V, -9.4 A, 620 m Description FeaturesThese P-Channel enhancement mode power field effect -9.4 A, -250 V, RDS(on) = 620 m (Max.) @ VGS = -10 V,transistors are produced using Fairchilds proprietary, ID = -4.7 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 29 nC)technology is especially tailore
fqb9p25.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fqb9p25tm.pdf
October 2008QFETFQB9P25 / FQI9P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -9.4A, -250V, RDS(on) = 0.62 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 27 pF)This advanced technology is especially ta
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