FQB9P25 - описание и поиск аналогов

November 2013 FQB9P25 P-Channel QFET MOSFET -250 V, -9.4 A, 620 m Description Features These P-Channel enhancement mode power field effect -9.4 A, -250 V, RDS(on) = 620 m (Max.) @ VGS = -10 V, transistors are produced using Fairchild s proprietary, ID = -4.7 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 29 nC) technology is especially tailore

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

October 2008 QFET FQB9P25 / FQI9P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -9.4A, -250V, RDS(on) = 0.62 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology is especially ta