FQD3P50 - аналоги, параметры транзистора - Справочник транзисторов

FQD3P50 даташит

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fqd3p50tf fqd3p50tm fqd3p50 fqu3p50 fqu3p50tu.pdf pdf_icon

January 2009 QFET FQD3P50 / FQU3P50 500V P-Channel MOSFET Features General Description -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 18 nC) transistors are produced using Fairchild s proprietary, Low Crss ( typical 9.5 pF) planar stripe, DMOS technology. This advanced technology has been espe

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FQD3P50 P-Channel QFET MOSFET - 500 V, - 2.1 A, 4.9 Features - 2.1 A, - 500 V, RDS(on) = 4.9 (Max.) @ VGS = - 10 V, Description ID = - 1.05 A This P-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 18 nC) produced using ON Semiconductor s proprietary Low Crss (Typ. 9.5 pF) planar stripe and DMOS technology. This advanced MOSFET technology has

0.1. Size:1089K fairchild semi
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November 2010 FQD3P50TM_F085 500V P-Channel MOSFET Features General Description -2.1A, -500V, RDS(on) = 4.9 @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 18 nC) transistors are produced using Fairchild s proprietary, Low Crss ( typical 9.5 pF) planar stripe, DMOS technology. This advanced technology has been especially tai

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fqd3p20tf fqd3p20tm fqu3p20tu.pdf pdf_icon

April 2000 TM QFET QFET QFET QFET FQD3P20 / FQU3P20 200V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -2.4A, -200V, RDS(on) = 2.7 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technolo

Другие MOSFET... FQPF3N25 , FQD2N80 , FQP4N20L , FQD2N90 , FQD2P40 , FQD30N06 , FQD3N60CTMWS , FQB9P25 , P60NF06 , FQD3P50TMF085 , FQD4N20 , FQP11P06 , FQD4N25 , FQD4P25 , FQD5N20L , FQP12P10 , FQD5N60C .