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FQD4N20 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FQD4N20

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 30 W

Предельно допустимое напряжение сток-исток (Uds): 200 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Максимально допустимый постоянный ток стока (Id): 3 A

Максимальная температура канала (Tj): 150 °C

Сопротивление сток-исток открытого транзистора (Rds): 1.4 Ohm

Тип корпуса: TO252_DPAK

Аналог (замена) для FQD4N20

 

 

FQD4N20 Datasheet (PDF)

1.1. fqd4n20 fqu4n20.pdf Size:819K _fairchild_semi

FQD4N20
FQD4N20

January 2009 QFET FQD4N20 / FQU4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 200V, RDS(on) = 1.4? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been especially tailored to

4.1. fqd4n25 fqu4n25.pdf Size:722K _fairchild_semi

FQD4N20
FQD4N20

May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology has been espe

 5.1. fqd4n50 fqu4n50.pdf Size:844K _fairchild_semi

FQD4N20
FQD4N20

January 2009 QFET FQD4N50 / FQU4N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.6A, 500V, RDS(on) = 2.7? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been especially tailored to

Другие MOSFET... FQP4N20L , FQD2N90 , FQD2P40 , FQD30N06 , FQD3N60CTM_WS , FQB9P25 , FQD3P50 , FQD3P50TM_F085 , TPC8107 , FQP11P06 , FQD4N25 , FQD4P25 , FQD5N20L , FQP12P10 , FQD5N60C , FDS4675 , FQD5P10 .

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Обновления

MOSFET: MDZ1N60UMH | MDV5524URH | MDV3605URH | MDV3604URH | MDV1595SURH | MDV1548URH | MDV1545URH | MDV1542URH | MDV1529EURH | MDV1528URH | MDV1527URH | MDV1526URH | MDV1525URH | MDV1524URH | MDV1523URH |
 


 

 

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